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The GBJ30G is a single-phase glass-passivated silicon bridge rectifier manufactured by GeneSiC Semiconductor. It features a maximum average forward rectified current of 30 A at a case temperature of 98 °C and a repetitive peak reverse voltage of 400 V. The device operates within a junction temperature range of -50 °C to +150 °C. Key electrical parameters include a maximum forward voltage of 1.05 V, a maximum reverse leakage current of 5 μA at 25 °C, and a maximum non-repetitive peak forward surge current of 420 A. The component utilizes a GBJ package with through-hole solder pin termination.
Verify the manufacturer designation on the datasheet header, as distributor listings may display conflicting branding information. Confirm that the specific part number matches the required 400 V rating and 30 A current capacity for your application requirements before finalizing orders.
Select this component when a 400 V blocking voltage and 30 A continuous current are required in a standard GBJ footprint. Ensure adequate thermal management is provided, as the rated current depends on maintaining the case temperature at 98 °C or lower using the recommended heatsink dimensions.
This component belongs to the GBJ30B through GBJ30G series, which shares identical physical dimensions and thermal characteristics. The series offers varying voltage ratings from 100 V to 400 V while maintaining the same 30 A current handling capability and package form factor for interchangeable design flexibility.
Compatible substitutes within the same series include GBJ30B (100 V) and GBJ30D (200 V), provided the circuit voltage does not exceed their respective ratings. Other manufacturers offering GBJ-form-factor bridge rectifiers with matching 400 V and 30 A specifications may also be suitable.