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GC9941-TSR is listed in the RF Diode range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is RF DIODE SCHOTTKY 4V. Review the specifications below when checking this part for your BOM.
RF Diode specifications for GC9941-TSR
- Description：RF DIODE SCHOTTKY 4V
- Series：-
- Mfr：Microchip Technology
- Package：Tray
- Diode Type：Schottky - Single
- Voltage - Peak Reverse (Max)：4V
- Current - Max：-
- Capacitance @ Vr, F：0.1pF @ 0V, 1MHz
- Resistance @ If, F：20Ohm @ 5mA, 1MHz
- Power Dissipation (Max)：-
- Operating Temperature：-55°C ~ 150°C
- Package / Case：3-SMD, Flat Leads
- Supplier Device Package：-
- Grade：-
- Qualification：-
RF Diode datasheet and documents for GC9941-TSR
RF Diode Overview
The GC9941-TSR is a high barrier Schottky barrier diode designed for mixer and detector applications in the Ku-Ka frequency range. It features a monolithic beamlead design to minimize parasitic inductance and capacitance, ensuring repeatable performance through 26.5 GHz. The device operates within a temperature range of -55°C to +150°C and has a maximum power handling rating of 100 mW. Key electrical parameters include a minimum breakdown voltage (VB) of 0.10 V at 10 µA, a maximum junction capacitance (CJ) of 0.10 pF at 0 V, a maximum forward voltage (VF) of 660 mV at 1 mA, and a maximum dynamic resistance (RD) of 20 Ω at 5 mA. The typical single-sideband noise figure is 7 dB.
RF Diode Feature Summary
- Monolithic beamlead design eliminates wire bonding issues to improve reliability and reduce parasitics.
- Optimized epitaxy and metallization achieve low RS-CJ products for exceptional conversion loss performance.
- High barrier height configuration suitable for applications with high drive levels such as Doppler mixers.
RF Diode Applications
- Mixers
- Level Detectors
- Phase Detectors
RF Diode Procurement Notes
Verify the specific package style and terminal configuration when ordering, as the base part number requires suffixes for distinct physical forms. Confirm RoHS compliance status and any required 'High Rel' screening options directly with the manufacturer or authorized distributors prior to purchase.
RF Diode Selection Notes
Select this component for Ku-Ka band designs requiring high barrier heights to handle significant local oscillator drive levels. Ensure the circuit layout accommodates the beamlead termination style and verify that the operating frequency aligns with the specified 26.5 GHz upper limit for optimal performance.
RF Diode Part Context
This device belongs to the GC9900 series of Schottky barrier diodes manufactured by Microchip Technology (formerly Microsemi). The series offers various barrier heights ranging from ultra-low to high configurations to suit different mixer drive requirements across C, X, and Ku-Ka bands.
RF Diode Replacement Considerations
GC9942-TSR-129B
RF Diode FAQ
What is the recommended frequency range for the GC9941-TSR?
The GC9941-TSR is designed for operation in the Ku-Ka frequency range, with performance specifications valid up to 26.5 GHz.
How does the monolithic beamlead design benefit this diode?
The monolithic beamlead design minimizes parasitic inductance and capacitance, which improves reliability and ensures repeatable performance in microwave integrated circuit (MIC) applications compared to traditional wire-bonded devices.
What is the maximum junction capacitance for this model?
The maximum junction capacitance (CJ) for the GC9941-TSR is 0.10 pF, measured at 0 Volts and 1 MHz.
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