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Product Detailed Parameters
- Description：1700V, 15M SIC MOSFET MODULE, SO
- Series：QSiC™
- Mfr：SemiQ
- Package：Tube
- FET Type：N-Channel
- Technology：SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：204A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：20V
- Rds On (Max) @ Id, Vgs：14mOhm @ 100A, 20V
- Vgs(th) (Max) @ Id：4V @ 40mA
- Gate Charge (Qg) (Max) @ Vgs：416 nC @ 20 V
- Vgs (Max)：+25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds：10878 pF @ 1000 V
- FET Feature：-
- Power Dissipation (Max)：652W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Supplier Device Package：SOT-227
- Package / Case：SOT-227-4, miniBLOC
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Overview
The SemiQ GCMS010B120S1-E1 is a QSiC™ 1200V SiC COPACK power module in an isolated SOT-227 package. It integrates a high-speed N-channel SiC MOSFET and a freewheeling SiC Schottky barrier diode (SBD). Key electrical parameters include a drain-source voltage of 1200 V, a continuous drain current of 204 A at 25°C case temperature, and a typical on-resistance of 9 mΩ. The module supports a maximum junction temperature of 175°C and features a Kelvin source connection for stable gate drive operation.
Feature Summary
- Integrates a high-speed SiC MOSFET with a freewheeling SiC SBD exhibiting zero reverse recovery characteristics.
- Features a Kelvin reference terminal to ensure stable gate drive operation under high-current conditions.
- Provides direct mounting capability to heatsinks via an electrically isolated package design.
Applications
- Photovoltaic inverters
- Battery chargers
- Server power supplies
- Energy storage systems
Procurement Notes
Verify the specific datasheet revision against the manufacturer's official documentation prior to procurement. Confirm that the required thermal interface materials and mounting hardware are compatible with the specified M4-0.7 screw torque requirements. Ensure the application environment adheres to the stated operating temperature range and isolation voltage limits defined in the absolute maximum ratings.
Selection Notes
Select this component for designs requiring low switching losses and high thermal efficiency in compact form factors. The integrated SBD eliminates reverse recovery issues, simplifying snubber circuit requirements. Evaluate the thermal resistance values to determine appropriate heatsinking solutions for maintaining junction temperatures within safe operational limits during continuous duty cycles.
Part Context
This module belongs to the QSiC™ series from SemiQ, designed for high-performance power conversion applications. It utilizes silicon carbide technology to achieve superior switching speeds and thermal performance compared to traditional silicon devices. The COPACK architecture combines discrete components into a single ruggedized module for improved reliability.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
FAQ
What is the purpose of the Kelvin source pin?
The Kelvin source pin provides a dedicated reference point for the gate driver, ensuring stable operation by minimizing voltage drops caused by high source currents flowing through common ground paths.
Does the integrated diode exhibit reverse recovery charge?
No, the integrated freewheeling SiC Schottky barrier diode is characterized by zero reverse recovery charge, which reduces switching losses and electromagnetic interference.
