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Product Detailed Parameters
- Description：SIC 1200V 80M MOSFET & 10A SBD S
- Series：-
- Mfr：SemiQ
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：20V
- Rds On (Max) @ Id, Vgs：100mOhm @ 20A, 20V
- Vgs(th) (Max) @ Id：4V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs：58 nC @ 20 V
- Vgs (Max)：+25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds：1374 pF @ 1000 V
- FET Feature：-
- Power Dissipation (Max)：142W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Supplier Device Package：SOT-227
- Package / Case：SOT-227-4, miniBLOC
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Overview
The GCMS080B120S1-E1 is a single N-channel Silicon Carbide (SiC) MOSFET module manufactured by SemiQ. It features a 1200V drain-source breakdown voltage and a typical on-resistance of 80 milliohms. The device integrates a parallel 10A Schottky Barrier Diode (SBD). It utilizes an SOT-227 package with screw mount installation, supporting a maximum operating temperature of +175°C and a power dissipation capacity of 2.113 kW.
Feature Summary
- Integrates a 10A parallel Schottky Barrier Diode within the SiC MOSFET module structure
- Utilizes Silicon Carbide technology for enhanced thermal performance and switching efficiency
- Designed in the standard SOT-227 package for robust mechanical mounting
Applications
- High-frequency power conversion systems
- Industrial motor drives
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify the specific suffix E1 against the manufacturer's latest datasheet to confirm pinout compatibility and electrical tolerances. Ensure the procurement channel provides original manufacturer documentation. Confirm that the SOT-227 package dimensions match the target PCB or heatsink design requirements before finalizing orders.
Selection Notes
Select this component when a discrete solution combining a high-voltage SiC MOSFET with a fast recovery diode is required. The 80 milliohm resistance offers a balance between conduction loss and cost. Consider the integrated SBD for applications requiring freewheeling capabilities without adding external components.
Part Context
This module belongs to SemiQ's second-generation SiC MOSFET product line. It serves as an upgrade to traditional silicon IGBTs, offering faster switching speeds and lower losses. The GCMX series represents the variant without the integrated diode, while this model includes it.
Replacement Considerations
The GCMX080B120S1-E1 is a related variant from the same manufacturer but lacks the integrated 10A Schottky Barrier Diode. Substitution requires evaluating if the application can accommodate an external diode or if the internal diode functionality is critical.
