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Product Detailed Parameters
- Description：MOSFET 2N-CH 1200V 173A
- Series：-
- Mfr：SemiQ
- Package：Tray
- Technology：Silicon Carbide (SiC)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：173A (Tc)
- Rds On (Max) @ Id, Vgs：14mOhm @ 100A, 20V
- Vgs(th) (Max) @ Id：4V @ 40mA
- Gate Charge (Qg) (Max) @ Vgs：483nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds：13800pF @ 800V
- Power - Max：577W (Tc)
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The GCMX010A120B3B1P is a Silicon Carbide (SiC) MOSFET module manufactured by SemiQ, belonging to the GCMX series. It features an N-Channel configuration with a drain-source breakdown voltage of 1.2 kV and a continuous drain current of 201 A at case temperature. The device exhibits a maximum on-resistance of 14 mOhms at 100 A and 20 V. It supports a gate-source voltage range of -5 V to +20 V with a threshold voltage of 4 V. Operating within a junction temperature range of -40°C to 175°C, it delivers a power dissipation capacity of 600 W. Key switching parameters include a turn-on delay of 22 ns, turn-off delay of 42 ns, rise time of 8 ns, and fall time of 16 ns.
Feature Summary
- Utilizes Silicon Carbide technology for high-temperature operation up to 175°C
- Integrated full-bridge topology reduces component count in power electronics designs
- Low on-resistance minimizes conduction losses during high-current operation
Applications
- High-power motor drive inverters
- Industrial power conversion systems
- Uninterruptible power supply (UPS) units
Procurement Notes
Verify the specific suffix against official documentation to confirm pinout and electrical characteristics match the design requirements. Confirm RoHS compliance status through the manufacturer's latest datasheet before integration into regulated products.
Selection Notes
Select this module when designing circuits requiring a complete H-bridge configuration in a single package. Ensure the thermal management system can handle the 600 W power dissipation rating. Verify that the gate driver provides the required ±20 V swing for optimal switching performance.
Part Context
This component is part of SemiQ's GCMX series of SiC MOSFET modules. It complements other variants like the GCMX016B120B3H1P and GCMX020A120B2H1P, offering different current ratings and configurations such as half-bridge or single-channel options within the same family.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-referencing requires consulting official replacement guides from SemiQ.
