GCMX010B120S1-E1

$37.41

Description：1200V, 10M SIC MOSFET MODULE, SO
Series：QSiC™
Mfr：SemiQ
Package：Tube

SKU:9301cdab38f2 Category: Single FETs, MOSFETs Brand: SemiQ

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Product introduction

Product Detailed Parameters

Description：1200V, 10M SIC MOSFET MODULE, SO
Series：QSiC™
Mfr：SemiQ
Package：Tube
FET Type：N-Channel
Technology：SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：204A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：14mOhm @ 100A, 20V
Vgs(th) (Max) @ Id：4V @ 40mA
Gate Charge (Qg) (Max) @ Vgs：418 nC @ 20 V
Vgs (Max)：+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds：10864 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：652W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Supplier Device Package：SOT-227
Package / Case：SOT-227-4, miniBLOC

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GCMX010B120S1-E1

Overview

The SemiQ GCMX010B120S1-E1 is a QSiC Gen3 1200V Silicon Carbide (SiC) MOSFET power module housed in an isolated SOT-227 package. It features a maximum drain-source voltage of 1200V and a continuous drain current of 204A at 25°C case temperature, with a typical on-resistance of 9mΩ. The device supports a maximum junction temperature of 175°C and includes a Kelvin reference for stable gate drive operation.

Feature Summary

High-speed switching SiC MOSFETs optimized for low switching losses
Direct mounting to heatsink via isolated package with rugged mechanical design
Kelvin reference terminal integrated for stable gate drive operation
Low junction-to-case thermal resistance for efficient heat dissipation

Applications

Photovoltaic inverters
Battery chargers
Server power supplies
Energy storage systems

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm exact electrical tolerances and testing parameters. Confirm RoHS compliance status and REACH SVHC declarations directly with the manufacturer or authorized distributors prior to procurement. Ensure application requirements align with the absolute maximum ratings defined in the datasheet.

Selection Notes

Select this component for high-voltage applications requiring fast switching speeds and low conduction losses. Evaluate the thermal management strategy based on the specified junction-to-case thermal resistance and derating curves. Ensure the driving circuitry can accommodate the recommended gate voltage range and internal gate resistance characteristics.

Part Context

This part belongs to the SemiQ QSiC series of 1200V SiC MOSFET power modules. It utilizes advanced silicon carbide technology to provide superior performance compared to traditional silicon devices. The SOT-227 package allows for direct heatsink mounting, simplifying system integration and improving thermal efficiency in compact designs.