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Product Detailed Parameters
- Description：SIC MOSFET MOD
- Series：-
- Mfr：SemiQ
- Package：Tube
- FET Type：N-Channel
- Technology：SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss)：1700 V
- Current - Continuous Drain (Id) @ 25°C：123A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：20V
- Rds On (Max) @ Id, Vgs：20mOhm @ 100A, 20V
- Vgs(th) (Max) @ Id：4V @ 40mA
- Gate Charge (Qg) (Max) @ Vgs：430 nC @ 20 V
- Vgs (Max)：+25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds：12803 pF @ 1.2 kV
- FET Feature：-
- Power Dissipation (Max)：652W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Supplier Device Package：SOT-227
- Package / Case：SOT-227-4, miniBLOC
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Overview
The SemiQ GCMX015A170S1-E1 is a single N-channel Silicon Carbide (SiC) MOSFET module designed for high-power applications. It features a 1700V drain-source breakdown voltage and a maximum on-resistance of 7 milliohms. The device supports a continuous drain current of 397 Amperes at case temperature, with a power dissipation rating of 2.113 kW. Operating within a junction temperature range of -40°C to +175°C, it utilizes a screw-mount S3 package. Key switching parameters include a rise time of 22 nanoseconds and a fall time of 32 nanoseconds.
Feature Summary
- Utilizes Silicon Carbide technology for enhanced thermal performance and efficiency in high-voltage environments.
- Engineered with a robust S3 screw-mount package to facilitate secure installation and effective heat dissipation.
- Optimized switching characteristics with low rise and fall times to support high-frequency operation.
Applications
- High-power industrial motor drives
- Uninterruptible power supply systems
- Renewable energy inverters
Procurement Notes
Verify the specific datasheet revision and electrical test conditions prior to integration. Confirm mechanical dimensions and mounting torque specifications against the target design requirements. Ensure compatibility with gate drive voltages ranging from -10V to +25V. Validate thermal management solutions to maintain junction temperatures within the specified operational limits during peak load conditions.
Selection Notes
Select this component when a single-phase configuration with high current capacity is required. The 1700V rating provides sufficient headroom for 1200V class systems. Compare the 7mOhm on-resistance against alternative modules to balance conduction losses with switching frequency requirements. Consider the physical footprint of the S3 package for PCB or chassis layout constraints.
Part Context
This module belongs to the SemiQ GCMX series of discrete SiC MOSFETs. It represents a standalone solution distinct from multi-chip configurations like half-bridges or six-packs. The S3 packaging standard ensures compatibility with established thermal interface materials and mounting hardware commonly used in power electronics assemblies.
Replacement Considerations
Direct substitutes require matching 1700V ratings, similar on-resistance values, and compatible S3 mechanical footprints. Verify pinout alignment and gate threshold voltage specifications before cross-referencing with other manufacturers' offerings.
