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Product Detailed Parameters
- Description：MOSFET 4N-CH 1200V 102A
- Series：-
- Mfr：SemiQ
- Package：Tray
- Technology：Silicon Carbide (SiC)
- Configuration：4 N-Channel (Full Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：102A (Tc)
- Rds On (Max) @ Id, Vgs：28mOhm @ 50A, 20V
- Vgs(th) (Max) @ Id：4V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs：222nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds：5600pF @ 800V
- Power - Max：333W (Tc)
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The SemiQ GCMX020A120B2H1P is a silicon carbide (SiC) MOSFET module belonging to the QSiC Gen3 series. It features a four-channel N-Channel configuration arranged as a full bridge. The device supports a drain-source voltage of 1200V and delivers a continuous drain current of 102A at case temperature. Its maximum on-resistance is 28mΩ at 50A and 20V gate drive. The module operates within a junction temperature range of -40°C to +175°C with a power dissipation rating of 333W. Key switching parameters include a gate charge of 222nC and an input capacitance of 5600pF.
Feature Summary
- Utilizes Silicon Carbide technology for high-temperature operation up to 175°C
- Integrates four N-Channel MOSFETs into a single full-bridge configuration
- Designed for baseplate mounting to facilitate thermal management in high-power applications
Applications
- High-frequency motor drives
- Industrial power supplies
- Uninterruptible power systems
Procurement Notes
Verify the specific suffix H1P against official datasheets to confirm pinout and electrical characteristics, as variations exist within the GCMX family. Ensure compatibility with existing thermal interface materials and mounting hardware requirements before integration. Cross-reference manufacturer documentation for any recent revisions to the QSiC Gen3 product line specifications.
Selection Notes
Select this component when a compact full-bridge solution is required for 1200V SiC applications. The 102A current rating suits moderate-to-high power density designs. Evaluate thermal resistance values against system cooling capabilities to ensure the 333W dissipation limit is not exceeded under worst-case operating conditions.
Part Context
This part belongs to SemiQ's QSiC Gen3 portfolio, which emphasizes reduced parasitic inductance and improved switching performance. The GCMX series specifically targets industrial and automotive sectors requiring robust, high-voltage discrete modules. It represents an evolution in SiC packaging designed to enhance reliability in demanding power conversion environments.
Replacement Considerations
Direct replacements are limited due to unique package and electrical profiles. Consider other SemiQ GCMX variants like GCMX016B120B3H1P or GCMX040A120B2T1P only if circuit topology allows for different channel counts or current ratings. Verify all pinouts and thermal characteristics match before substitution.
