GCMX020A120B2H2P

Overview

The SemiQ GCMX020A120B2H2P is a silicon carbide (SiC) MOSFET module configured as a full-bridge array. It features four N-channel devices with a drain-source breakdown voltage of 1.2 kV and a continuous drain current of 102 A at case temperature. The maximum on-resistance is 28 mOhms at 50 A and 20 V gate drive, with a threshold voltage maximum of 4 V. Operating within a junction temperature range of -40°C to +175°C, the module dissipates up to 333 W. Key switching parameters include a maximum gate charge of 237 nC and an input capacitance of 5600 pF at 800 V.

Feature Summary

• Integrated full-bridge configuration utilizing four N-channel SiC MOSFETs for high-power applications
• High thermal stability supporting operation up to a maximum junction temperature of 175°C
• Low on-resistance characteristics optimized for efficient power conversion at elevated currents

Applications

• High-power inverter systems requiring compact bridge configurations
• Industrial motor drives utilizing silicon carbide technology
• Uninterruptible power supplies (UPS) designed for high efficiency

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm pinout compatibility and electrical ratings. Ensure that the selected variant matches the required thermal management specifications for the intended application environment. Cross-reference datasheet revisions to validate parameter consistency before integration into design schematics.

Selection Notes

Select this component when a complete H-bridge topology is required within a single package to reduce system complexity. Evaluate the 102 A current rating against peak load requirements and ensure adequate heatsinking to maintain junction temperatures below 175°C. Confirm that the 1.2 kV voltage rating exceeds the maximum bus voltage with appropriate safety margins.

Part Context

This device belongs to the QSiC series from SemiQ, which focuses on high-frequency, high-power silicon carbide solutions. The GCMX series specifically targets designs needing reduced part counts and improved cooling efficiency through integrated multi-device modules. This full-bridge variant complements the manufacturer's half-bridge and discrete offerings.

Replacement Considerations

Direct substitutes require matching the 1.2 kV rating, 102 A current capacity, and full-bridge configuration. Verify pin compatibility and thermal resistance values. Alternative options may include other SiC full-bridge modules from different manufacturers if form-factor constraints allow.