ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：1200V, 40M SIC MOSFET FULL BRIDG
- Series：QSiC™
- Mfr：SemiQ
- Package：Box
- Technology：Silicon Carbide (SiC)
- Configuration：4 N-Channel (Full Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：56A (Tc)
- Rds On (Max) @ Id, Vgs：52mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id：4V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs：115nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds：3200pF @ 800V
- Power - Max：217W (Tc)
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The GCMX040A120B2H2P is a silicon carbide (SiC) MOSFET module from the SemiQ QSiC series, configured as a four-channel N-Channel full bridge. It features a 1200V drain-source voltage rating and supports a continuous drain current of 56A at case temperature. The maximum on-resistance is 52 milliohms at 40A and 20V gate drive. Key switching parameters include a maximum gate charge of 115nC and an input capacitance of 3200pF at 800V. The device operates within a junction temperature range of -40°C to 175°C with a maximum power dissipation of 217W.
Feature Summary
- Utilizes silicon carbide technology for high-temperature operation up to 175°C.
- Integrates a complete four-N-channel full bridge configuration in a single package.
- Employs a base-mounted module design for efficient thermal management.
Applications
- High-power electronic system designs requiring reduced component counts.
- Applications benefiting from compact product size and efficient cooling solutions.
Procurement Notes
Verify the specific datasheet version and electrical characteristics against the manufacturer's official documentation before integration. Confirm that the mounting requirements align with the base-mount package style. Ensure the driving circuitry supports the specified gate voltage limits and switching speeds. Cross-reference the part number with authorized distributors to confirm availability and authenticity.
Selection Notes
Select this component when a full bridge topology is required within a single module footprint. Consider the 52 milliohm on-resistance and 56A current rating for appropriate thermal design. Verify that the 1200V blocking voltage meets the system's DC bus requirements. Evaluate the 217W power dissipation capability against the available heatsinking infrastructure.
Part Context
This module belongs to the SemiQ QSiC series, which includes various high-power SiC devices such as discrete MOSFETs, Schottky diodes, and half-bridge modules. The GCMX040A120B2H2P specifically provides a full bridge configuration, complementing the manufacturer's broader portfolio designed to help designers reduce part counts and improve efficiency.
Replacement Considerations
Direct substitutes are not explicitly listed in the provided data. Similar full bridge SiC modules from other manufacturers may require verification of pin compatibility, thermal resistance, and electrical ratings.
