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Product Detailed Parameters
- Description：SIC 1200V 40M MOSFET SOT-227
- Series：-
- Mfr：SemiQ
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：57A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：20V
- Rds On (Max) @ Id, Vgs：52mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id：4V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs：121 nC @ 20 V
- Vgs (Max)：+25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds：3185 pF @ 1000 V
- FET Feature：-
- Power Dissipation (Max)：242W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Supplier Device Package：SOT-227
- Package / Case：SOT-227-4, miniBLOC
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Overview
The SemiQ GCMX040B120S1-E1 is a Silicon Carbide (SiC) MOSFET power module featuring a single N-channel configuration housed in an SOT-227-4 package. It offers a drain-source breakdown voltage of 1200V and a maximum on-resistance of 40mΩ. The device supports a continuous drain current of 56A at case temperature, with a power dissipation rating of 118W. Operating temperatures range from -55°C to +175°C, and it utilizes screw mount installation for thermal management.
Feature Summary
- Utilizes Silicon Carbide technology for high-temperature operation up to 175°C
- Features low on-resistance for improved conduction efficiency
- Designed for robust screw mount installation in the SOT-227-4 package
Applications
- PFC Boost Converters
- DC-DC Converters
Procurement Notes
Verify the specific suffix E1 against the official datasheet to confirm pinout and electrical tolerances. Confirm that the SOT-227-4 footprint matches the target PCB design. Ensure thermal interface materials are compatible with the screw mount requirements for optimal heat dissipation at the specified 175°C junction temperature limit.
Selection Notes
Select this component when a single-phase SiC switch is required with a 1200V rating and low Rds(on). The SOT-227-4 package suits applications needing moderate current handling with direct board or heatsink mounting. Compare the 40mΩ resistance against system loss budgets and ensure the 56A current rating aligns with peak load demands without exceeding thermal limits.
Part Context
This module belongs to the SemiQ GCMX series of Silicon Carbide MOSFETs. The series focuses on high-efficiency power switching solutions using advanced SiC technology. The GCMX040B120S1-E1 specifically targets single-switch applications requiring high voltage blocking capability and fast switching characteristics within a compact, standardized package form factor.
Replacement Considerations
Check for other GCMX series variants with different Rds(on) values if lower losses are needed. Verify compatibility with existing gate drive voltages and thermal designs when substituting with other 1200V SiC modules from SemiQ or competitors.
