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GE08MPS06Q-TR is listed in the RF Diode range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is 650V 8A PQFN 8X8 SIC SCHOTTKY MP. Review the specifications below when checking this part for your BOM.
RF Diode specifications for GE08MPS06Q-TR
- Description：650V 8A PQFN 8X8 SIC SCHOTTKY MP
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Type：-
- Voltage - Peak Reverse (Max)：-
- Current - Max：-
- Capacitance @ Vr, F：-
- Resistance @ If, F：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
RF Diode datasheet and documents for GE08MPS06Q-TR
RF Diode Overview
The GE08MPS06Q-TR is a Silicon Carbide (SiC) Schottky MPS diode manufactured by GeneSiC Semiconductor. It features a single configuration housed in a TO-252-2 surface-mount package. The device supports a maximum repetitive peak reverse voltage of 650 V and conducts an average forward current of 8 A. Key electrical characteristics include a forward voltage of 1.25 V, a surge current rating of 56 A, and a leakage current of 1 uA. It operates within a temperature range of -55°C to +175°C with a power dissipation capacity of 132 W.
RF Diode Feature Summary
- Utilizes Silicon Carbide material for high thermal stability and efficiency
- Integrates Schottky and MPS structures to minimize switching losses
- Designed for high-temperature operation up to 175°C
RF Diode Applications
- High-frequency power conversion circuits
- Industrial motor drives
- Solar inverters
RF Diode Procurement Notes
Verify the specific suffix 'Q' against official manufacturer documentation to confirm any distinct qualification or reliability standards compared to standard variants. Ensure the ordering information matches the exact part number required for your design specifications before finalizing procurement.
RF Diode Selection Notes
Select this component when designing systems requiring low forward voltage drop and high thermal endurance. The TO-252-2 package facilitates efficient heat dissipation for moderate power applications. Confirm that the 650V blocking capability aligns with the system's peak voltage requirements.
RF Diode Part Context
This component belongs to the SiC Schottky MPS series from GeneSiC Semiconductor. It represents a class of wide-bandgap devices engineered to outperform traditional silicon rectifiers in terms of speed and thermal management. The product line targets modern power electronics demanding higher efficiency and compact form factors.
RF Diode Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source data. Consult the manufacturer's cross-reference guide for verified alternatives.
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