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GE08MPS06Q is listed in the RF Diode range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is RF DIODE SCHOTTKY 650V 4QFN. Review the specifications below when checking this part for your BOM.
The GE08MPS06Q is a Silicon Carbide (SiC) Schottky MPS diode manufactured by GeneSiC Semiconductor. It features a single configuration in a TO-252-2 surface-mount package. Key electrical parameters include a repetitive reverse voltage (Vrrm) of 650 V and a forward current (If) of 8 A. The device exhibits a maximum forward voltage (Vf) of 1.25 V at rated current and a low reverse leakage current (Ir) of 1 µA. It supports a forward surge current (Ifsm) of 56 A and operates within a junction temperature range of -55°C to +175°C, with a power dissipation rating of 132 W.
Verify the specific suffix 'Q' against official GeneSiC documentation to confirm any distinct qualification or automotive-grade specifications compared to standard variants. Ensure the ordering part number matches the required package and tape/reel configuration for automated assembly processes.
Select this component when a 650V SiC diode with an 8A continuous current rating is required in a TO-252-2 footprint. Consider the 1.25V forward voltage and 1µA leakage current for thermal management calculations. Confirm that the 175°C operating temperature range meets the system's environmental requirements.
This part belongs to the GeneSiC SiC Schottky MPS series, designed to replace traditional silicon fast-recovery diodes in high-performance applications. The MPS structure combines the benefits of Schottky and PN junction technologies to optimize switching speed and reduce reverse recovery charge.
Consult official cross-reference guides for direct replacements. Verify pinout compatibility and thermal resistance characteristics before substituting with other 650V SiC diodes in the TO-252-2 package.
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