GE12050EEA3

FET, MOSFET Arrays Overview

The GE12050EEA3 is a 1200V six-pack (three-phase) silicon carbide power module designed for high-power, high-frequency applications requiring superior power density. It features highly reliable AEC-Q101 qualified SiC MOSFET devices rated to 200°C with a low on-state resistance of 3.1 mΩ per switch. The module utilizes GE Power Overlay wire-bondless technology and an AlSiC baseplate with a Si3N4 AMB substrate to minimize stray inductance and switching losses. Key electrical parameters include a continuous drain current of 475 A at 25°C case temperature, a breakdown voltage of 1200 V, and a maximum junction temperature of 175°C.

FET, MOSFET Arrays Feature Summary

• Utilizes GE Power Overlay wire-bondless technology for enhanced reliability and performance
• Features an AlSiC baseplate and Si3N4 AMB substrate to minimize parasitic parameters
• Includes integrated temperature sensing via dedicated RTD pins
• Provides dedicated DESAT and Source-Kelvin pins for precise gate drive control

FET, MOSFET Arrays Applications

• High power traction inverters
• High frequency motor drives
• Industrial power conversion systems

FET, MOSFET Arrays Procurement Notes

Verify the specific revision status of the datasheet prior to procurement, as the document indicates preliminary data which may be subject to change without notice. Confirm that the ordering suffix matches the required configuration, as variations can affect pinout or thermal characteristics. Ensure compliance with the manufacturer's disclaimer regarding life support systems and human body implantation, which require express written approval. Cross-reference the latest electrical specifications against the final production samples to account for any updates made after the public release date.

FET, MOSFET Arrays Selection Notes

Select this module when designing systems that demand minimal switching losses and high power density within a compact footprint. The low stray inductance design supports fast switching speeds typical of wide bandgap semiconductors. Consider the integrated temperature sensor for accurate thermal management and protection circuits. Evaluate the 1200V rating against system voltage requirements to ensure adequate safety margins under transient conditions.

FET, MOSFET Arrays Part Context

This component belongs to GE Aerospace's portfolio of silicon carbide power modules, specifically engineered for demanding automotive and industrial environments. The six-pack configuration integrates three half-bridge legs into a single unit, simplifying the assembly process for three-phase inverter topologies. The use of advanced packaging materials like aluminum silicon carbide enhances thermal conductivity compared to traditional copper baseplates.

FET, MOSFET Arrays Replacement Considerations

No publicly confirmed substitute part numbers are available in the provided documentation.