GE17045EEA3

FET, MOSFET Arrays Overview

The GE17045EEA3 is a 1700V, 6-pack (3-phase) Silicon Carbide power module designed for high-power, high-frequency applications requiring superior power density. It features highly reliable GE SiC MOSFET devices with a low on-state resistance of 3.75 mΩ per switch and ultra-low switching losses across the entire operating range. The module supports a continuous drain current of 425 A at 25°C case temperature and includes an integrated temperature sensor, dedicated DESAT pin, and source-Kelvin pin. Constructed with an AlSiC baseplate and Si3N4 AMB substrate, it minimizes stray inductance to enhance performance.

FET, MOSFET Arrays Feature Summary

• Utilizes highly reliable GE SiC MOSFET devices for superior performance in high-power applications
• Features low stray inductance design to minimize switching losses and electromagnetic interference
• Incorporates an integrated temperature sensing RTD for direct junction temperature monitoring
• Includes dedicated DESAT and Source-Kelvin pins for enhanced protection and accurate gate drive control

FET, MOSFET Arrays Applications

• High power density electric propulsion systems
• Hybrid-electric flight platforms
• Next-generation military aircraft electrical power systems
• High voltage traction inverters

FET, MOSFET Arrays Procurement Notes

Verify that the specific order matches the GE17045EEA3 part number and confirm the document revision status prior to procurement. Ensure all handling procedures comply with the manufacturer's electrostatic discharge guidelines. Review the preliminary nature of the datasheet if applicable, as specifications may be subject to change without notice. Confirm compatibility with the intended thermal management solution and mounting torque requirements specified in the mechanical data section.

FET, MOSFET Arrays Selection Notes

Select this module when designing three-phase inverters that demand high breakdown voltage and minimal conduction losses. The low RDS(on) and ultra-low switching energy characteristics make it suitable for high-frequency operation where thermal efficiency is critical. Consider the integrated temperature sensor for precise thermal management in compact, high-density packaging environments. Evaluate the AlSiC baseplate for its ability to handle high thermal cycling stress in demanding aerospace or industrial applications.

FET, MOSFET Arrays Part Context

This component belongs to GE Aviation's portfolio of Silicon Carbide power modules, specifically engineered for advanced aerospace electrical power systems. It represents a shift towards higher voltage and frequency operation to improve overall system efficiency and reduce weight. The module is part of a series designed to support the increasing electrification of aircraft platforms, offering a robust solution for managing high power loads in constrained spaces.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.