GE17140CEA3

FET, MOSFET Arrays Overview

The GE17140CEA3 is a Silicon Carbide (SiC) power module manufactured by GE Aerospace. It features a half-bridge configuration with two N-channel devices. The component is rated for a drain-to-source voltage of 1700V and a continuous current of 1400A. Designed for chassis mounting, the module integrates six switches within its structure. This high-power semiconductor solution utilizes advanced SiC technology to support demanding electrical applications requiring robust thermal and voltage performance.

FET, MOSFET Arrays Feature Summary

• Utilizes Silicon Carbide (SiC) technology for enhanced power handling capabilities
• Provides a half-bridge configuration with dual N-channel device integration
• Engineered for direct chassis mounting to facilitate efficient thermal management

FET, MOSFET Arrays Applications

• High-voltage industrial power conversion systems
• Electric vehicle traction inverter modules
• Renewable energy grid interface inverters

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet version and ordering suffixes directly with GE Aerospace or authorized distributors. Confirm that the 1700V rating and 1400A current specifications align with your system requirements. Ensure compatibility with chassis mounting interfaces and thermal management solutions before procurement.

FET, MOSFET Arrays Selection Notes

Select this module when high voltage isolation and significant current capacity are required in a compact form factor. The SiC material offers superior switching efficiency compared to traditional silicon devices. Evaluate thermal resistance parameters and ensure adequate cooling infrastructure is available for the chassis mount design.

FET, MOSFET Arrays Part Context

GE Aerospace produces specialized power electronics alongside its aviation engines. The GE17140CEA3 represents their portfolio in high-performance semiconductor modules. These components support critical infrastructure and transportation sectors requiring reliable high-power switching solutions under extreme conditions.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference guides from GE Aerospace for verified substitutes. Ensure replacement parts match the 1700V rating, 1400A current, and half-bridge topology. Verify pinout compatibility and thermal characteristics before substitution.