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The GHXS045A120S-D3 is a Silicon Carbide (SiC) Schottky Barrier Diode module manufactured by SemiQ. It features a 1200V reverse voltage rating and a continuous forward current of 45A. The component utilizes the SOT-227 package with screw mount installation style. Key electrical parameters include a maximum repetitive peak reverse voltage of 1200V and a forward current of 45A.
Verify the specific datasheet version to confirm exact thermal characteristics and mounting torque specifications. Ensure compatibility with existing cooling solutions due to the SOT-227 form factor. Cross-reference the manufacturer's latest documentation for any updates on compliance standards or pinout configurations before final integration.
Select this module when high efficiency and thermal performance are critical. The SiC material offers superior switching capabilities compared to traditional silicon diodes. Consider the 1200V rating for medium-voltage applications. Evaluate the SOT-227 package size against available board space and mechanical constraints.
This component belongs to the GHXS series of SiC power modules from SemiQ. The series is designed for robust industrial and automotive applications. It shares the SOT-227 package family with other variants in the lineup, offering standardized mounting options while varying in current and voltage ratings.
Direct substitutes within the same series include GHXS030A120S-D3 and GHXS050B120S-D3. These alternatives share the same package and technology but differ in current handling capacity. Verify that the alternative part meets the specific current requirements of the application.