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Product Detailed Parameters
- Description：DIODE MOD SIC 600V 50A SOT-227
- Series：-
- Mfr：SemiQ
- Package：Tube
- Diode Configuration：2 Independent
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：600 V
- Current - Average Rectified (Io) (per Diode)：50A
- Voltage - Forward (Vf) (Max) @ If：1.8 V @ 50 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：100 µA @ 600 V
- Operating Temperature - Junction：-55°C ~ 175°C
- Mounting Type：Chassis Mount
- Package / Case：SOT-227-4, miniBLOC
- Supplier Device Package：SOT-227
- Grade：-
- Qualification：-
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Overview
The GHXS050A060S-D3 is a Silicon Carbide Schottky Barrier Diode power module manufactured by SemiQ. It features a parallel configuration within a SOT-227 package designed for screw mounting. The device supports a reverse voltage of 600V and a forward current of 50A. Key electrical parameters include a forward voltage of 1.48V to 2V, with a maximum operating temperature of +175°C and a minimum of -55°C. This component utilizes advanced SiC technology to deliver high-efficiency performance in demanding power electronics applications.
Feature Summary
- Utilizes Silicon Carbide (SiC) technology for superior thermal and electrical performance
- Features a parallel diode configuration to enhance current handling capabilities
- Designed with a robust SOT-227 package suitable for reliable screw mounting
Applications
- Power supply systems
- Inverter circuits
- Charging station infrastructure
Procurement Notes
Verify the specific datasheet revision and manufacturer documentation to confirm technical specifications before integration. Ensure that the procurement channel provides authentic components from SemiQ to guarantee reliability. Cross-reference the part number GHXS050A060S-D3 with official catalogs to validate availability and compliance with required industry standards for power modules.
Selection Notes
Select this module when high-temperature operation up to 175°C is required. The 600V rating and 50A current capacity suit medium-power conversion tasks. Consider the parallel architecture for applications needing enhanced redundancy or current sharing. The SOT-227 form factor facilitates standard mechanical integration in compact power designs.
Part Context
This component belongs to the GHXS series of SiC Schottky diode modules from SemiQ. It represents Generation 3 technology in their discrete and power module lineup. The series is engineered for high-frequency switching and efficiency, positioning it as a modern solution for replacing traditional silicon-based diodes in advanced power electronics.
Replacement Considerations
Direct substitutes may include other 600V SiC Schottky diodes in similar packages. Verify pinout compatibility and thermal resistance characteristics when considering alternative brands. Ensure the replacement maintains the parallel configuration if system-level current sharing is critical.
