GHXS050A170S-D3

GHXS050A170S-D3

$143.85
  • Description:DIODE MOD SIC 1700V 150A SOT-227
  • Series:-

SKU:7715ec4a8896 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:DIODE MOD SIC 1700V 150A SOT-227
  • Series:-
  • Mfr:SemiQ
  • Package:Tube
  • Diode Configuration:2 Independent
  • Technology:SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max):1700 V
  • Current - Average Rectified (Io) (per Diode):150A
  • Voltage - Forward (Vf) (Max) @ If:1.9 V @ 50 A
  • Speed:No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:750 µA @ 1700 V
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-227-4, miniBLOC
  • Supplier Device Package:SOT-227
  • Grade:-
  • Qualification:-

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GHXS050A170S-D3

Overview

The GHXS050A170S-D3 is a Silicon Carbide (SiC) Schottky diode module manufactured by SemiQ. It features two independent diodes housed in a SOT-227-4, miniBLOC chassis mount package. The device supports a maximum reverse voltage of 1700 V and a continuous forward current of 50 A. It operates within a temperature range extending to +175°C, designed for high-power industrial applications requiring robust thermal performance and low switching losses.

Feature Summary

  • Utilizes Silicon Carbide Schottky technology for superior thermal stability and efficiency
  • Contains two independent diodes within a single chassis mount package
  • Engineered for high-voltage operation with a 1700 V reverse voltage rating

Applications

  • Electric vehicle charging systems
  • Induction heating equipment
  • Industrial power supplies

Procurement Notes

Verify the specific datasheet version provided by the manufacturer or authorized distributor before integration. Confirm that the SOT-227-4 mounting requirements align with your thermal management design. Ensure the 1700 V rating meets the circuit's peak inverse voltage demands. Check for any recent updates to the mechanical dimensions or electrical characteristics in the official documentation.

Selection Notes

Select this component when designing circuits requiring high-voltage isolation and efficient rectification. The dual-diode configuration simplifies layout for bridge or half-bridge topologies. Consider the chassis mount style for effective heat dissipation in high-current scenarios. Validate that the SiC material properties suit the operating frequency and temperature constraints of the target application.

Part Context

This part belongs to the SemiQ GHXS series of SiC power modules. These components are engineered for demanding power electronics environments. The series emphasizes reliability and performance in high-temperature conditions. The GHXS050A170S-D3 represents a specific configuration within this lineup, offering defined electrical limits for system designers.

Replacement Considerations

Public confirmed substitute part numbers: GHXS050B170S-D3.

GHXS050A170S-D3GHXS050A170S-D3
$143.85
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