GKI04031

Single FETs, MOSFETs Overview

The GKI04031 is a surface-mount N-channel Trench Power MOSFET manufactured by Sanken Electric USA Inc. It features a Drain-to-Source Voltage (VDS) of 40 V and a continuous Drain Current (ID) of 40 A at 25°C case temperature. The device exhibits a maximum On-Resistance (RDS(ON)) of 3.9 mΩ at VGS = 10 V and ID = 51.0 A, with a typical value of 2.9 mΩ. Total Gate Charge (Qg) is specified as 26.4 nC at VGS = 4.5 V and 56.1 nC at VGS = 10 V. The component utilizes an 8-PowerTDFN package (DFN 5x6 mm), supports a maximum junction temperature of 150°C, and has a thermal resistance from Junction to Case (RθJC) of 1.6 °C/W.

Single FETs, MOSFETs Feature Summary

• Low total gate charge enabling high-speed switching performance
• Capable of operation with 4.5 V gate drive voltage
• Low on-resistance for efficient power conversion
• Manufactured using trench technology

Single FETs, MOSFETs Applications

• DC-DC converters
• Synchronous rectification circuits
• General power supplies

Single FETs, MOSFETs Procurement Notes

Verify the current availability status before procurement planning, as this specific part number may be subject to discontinuation or lifecycle changes. Confirm that the required packaging format matches the standard shipping configuration provided by the manufacturer. Ensure all electrical parameters align with the target application's design specifications prior to ordering.

Single FETs, MOSFETs Selection Notes

Select this component when a low-voltage, high-current N-channel MOSFET is required for synchronous rectification or DC-DC applications. Consider the 40A current rating and 3.9mΩ RDS(ON) for efficiency requirements. Evaluate the DFN 5x6 package constraints against the available PCB copper area for optimal thermal dissipation. Verify compatibility with 4.5V or 10V gate drive signals.

Single FETs, MOSFETs Part Context

This component belongs to the Sanken Electric USA Inc. lineup of discrete power semiconductors. It is designed for general-purpose electronic equipment such as home appliances and office equipment. The product adheres to RoHS compliance standards and undergoes 100% Unclamped Inductive Load (UIL) testing to ensure reliability during manufacturing.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not documented in the official datasheet. Consult Sanken Electric sales representatives for alternative recommendations if this component is unavailable.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current for the GKI04031?

The maximum pulsed drain current (IDM) is 80 A, provided the pulse width is less than or equal to 100µs and the duty cycle is less than or equal to 1%.

Does the GKI04031 support 4.5V gate drive?

Yes, the device is capable of being driven by a 4.5V gate voltage, with a typical RDS(ON) of 5.5 mΩ under these conditions.

What is the single pulse avalanche energy rating?

The single pulse avalanche energy (EAS) is rated at 126 mJ under test conditions of VDD = 20V, L = 1 mH, IAS = 11.2 A, and RG = 4.7 Ω.