GP2D006A065A

Overview

The SemiQ GP2D006A065A is a Silicon Carbide Schottky diode in the Amp+ series, housed in a TO-220-2L package. It features a maximum repetitive peak reverse voltage of 650 V and a continuous forward current rating of 6 A at Tc=150°C. The device exhibits zero reverse recovery time with a total capacitive charge of 14 nC. Operating junction temperature ranges from -55°C to 175°C, with a typical thermal resistance of 2.30 °C/W.

Feature Summary

• Unipolar rectifier design enabling zero switching loss
• Fast, temperature-independent switching characteristics
• High surge current capability for robust operation
• Parallel devices with thermal stability

Applications

• Motor drives
• Switch mode power supplies
• Power factor correction

Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm RoHS compliance status and REACH SVHC declarations prior to integration. Ensure proper mounting torque of 1 N-m for M3 screws to maintain thermal performance and mechanical integrity during assembly processes.

Selection Notes

Select this component for high-frequency applications requiring minimal switching losses. Evaluate thermal derating curves based on case temperature requirements. Consider the 50 V/ns dv/dt ruggedness for circuits with rapid turn-on slew rates. Verify that the 650 V blocking voltage aligns with system DC bus specifications.

Part Context

This part belongs to the Amp+ family of Silicon Carbide Schottky diodes manufactured by SemiQ. The series emphasizes high efficiency and reduced heat sink size due to superior switching performance compared to traditional silicon alternatives.

Replacement Considerations

GP2D003A065A

FAQ

What is the reverse recovery time for this diode?

The device has a zero reverse recovery time, resulting in negligible reverse recovery charge.

What is the maximum dv/dt rating?

The diode supports a repetitive turn-on slew rate (dv/dt) of up to 50 V/ns.