GP2D010A120C

Description：DIODE SIL CARB 1200V 10A TO252
Series：Amp+™
Mfr：SemiQ
Package：Tube

SKU:b0b2c8da3e00 Category: Single Diodes Brand: SemiQ

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Product introduction

Product Detailed Parameters

Description：DIODE SIL CARB 1200V 10A TO252
Series：Amp+™
Mfr：SemiQ
Package：Tube
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：1200 V
Current - Average Rectified (Io)：10A
Voltage - Forward (Vf) (Max) @ If：1.8 V @ 10 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：0 ns
Current - Reverse Leakage @ Vr：20 µA @ 1200 V
Capacitance @ Vr, F：635pF @ 1V, 1MHz
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package：TO-252 (DPAK)
Operating Temperature - Junction：-55°C ~ 175°C
Grade：-
Qualification：-

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GP2D010A120C

Overview

The GP2D010A120C is a Silicon Carbide Schottky diode from the Amp+ series, rated for 1200 V repetitive peak reverse voltage and 10 A continuous forward current. It utilizes a TO-252-2L (DPAK) package with flange mounting capability. Key electrical parameters include a maximum forward voltage of 1.8 V at 10 A and 25 °C, and a total capacitive charge of 43 nC. The device supports junction temperatures up to 175 °C and offers zero reverse recovery characteristics.

Feature Summary

Zero reverse recovery current enabling fast, temperature-independent switching
High surge current capability ensuring robustness during transient phases
Unipolar rectifier design eliminating switching loss

Applications

Motor drives
Switch mode power supplies
Power factor correction

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status against EU Directive 2011/65/EC requirements. Ensure REACh SVHC declarations are obtained prior to integration. Validate datasheet revision history to ensure alignment with current manufacturing specifications.

Selection Notes

Select this component for high-frequency applications requiring minimal reverse recovery charge. Evaluate thermal management strategies based on the 0.80 °C/W junction-to-case thermal resistance. Consider the 1200 V rating for systems operating near maximum voltage limits. Verify package compatibility with existing PCB footprints for TO-252-2L configurations.

Part Context

This part belongs to the Amp+ series of Silicon Carbide Schottky diodes manufactured by Global Power Technologies Group Inc. The series focuses on high-efficiency rectification solutions utilizing wide bandgap semiconductor technology. The specific model provides a balance of current handling and voltage blocking capabilities within a standard surface-mount compatible package.