GP2D030A120U

Description：DIODE ARR SIC 1200V 50A TO247-3
Series：Amp+™

SKU:9816a4a99758 Category: Diode Arrays Brand: SemiQ

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Product introduction

Product Detailed Parameters

Description：DIODE ARR SIC 1200V 50A TO247-3
Series：Amp+™
Mfr：SemiQ
Package：Tube
Diode Configuration：1 Pair Common Cathode
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：1200 V
Current - Average Rectified (Io) (per Diode)：50A (DC)
Voltage - Forward (Vf) (Max) @ If：1.8 V @ 15 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：30 µA @ 1200 V
Operating Temperature - Junction：-55°C ~ 175°C
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247-3
Grade：-
Qualification：-

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GP2D030A120U

Overview

The GP2D030A120U is a 1200V Silicon Carbide Schottky diode in a TO-247-3L package. It features a maximum repetitive reverse voltage of 1200V and a continuous forward current of 50A at TC=25°C, derating to 30A at Tj=175°C. The device exhibits zero reverse recovery charge and switching time under 10ns. Thermal resistance from junction to case is 0.53°C/W. Surge capabilities include 300A non-repetitive peak forward current and 120A sine halfwave surge current.

Feature Summary

Unipolar rectifier technology enabling zero reverse recovery current and zero switching loss for higher efficiency
Fast, temperature-independent switching characteristics with high bandwidth performance
High surge current capability supporting demanding transient load conditions
Thermal stability allowing parallel device operation without current imbalance

Applications

Motor drives
Switch mode power supplies
Power factor correction

Procurement Notes

Verify the specific manufacturer datasheet revision and RoHS compliance status before integration. Confirm thermal management requirements align with the specified junction-to-case thermal resistance values. Ensure mounting torque specifications are strictly followed to maintain electrical isolation and thermal performance integrity during assembly.

Selection Notes

Select this component for high-frequency applications requiring minimal switching losses and fast response times. Evaluate thermal derating curves to ensure continuous current ratings remain within safe operating limits at elevated temperatures. Consider the TO-247-3L package dimensions for PCB layout compatibility and heat sink interface requirements.

Part Context

This part belongs to the Amp+ series of Silicon Carbide Schottky diodes manufactured by SemiQ (Global Power Technologies Group). The series focuses on high-efficiency power conversion solutions utilizing wide-bandgap semiconductor technology to reduce system size and improve overall energy conversion rates in modern electronic designs.