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Product Detailed Parameters
- Description：DIODE ARR SIC 1200V 65A TO247-3
- Series：Amp+™
- Mfr：SemiQ
- Package：Tube
- Diode Configuration：1 Pair Common Cathode
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：1200 V
- Current - Average Rectified (Io) (per Diode)：65A (DC)
- Voltage - Forward (Vf) (Max) @ If：1.8 V @ 20 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：40 µA @ 1200 V
- Operating Temperature - Junction：-55°C ~ 175°C
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The GP2D040A120U is a 1200V Silicon Carbide Schottky diode from SemiQ's Amp+ series, housed in a TO-247-3L package. It features a continuous forward current of 40A at 25°C case temperature and 65A at 175°C. The device exhibits zero reverse recovery time and negligible switching loss. Key electrical parameters include a maximum repetitive peak reverse voltage of 1200V, a typical forward voltage of 1.60V at 20A (25°C), and a total capacitive charge of 86nC. Thermal resistance from junction to case is 0.42°C/W.
Feature Summary
- Zero reverse recovery current enabling fast, temperature-independent switching
- Unipolar rectifier operation with zero switching loss for higher efficiency
- High surge current capability with thermal stability for parallel device configurations
Applications
- Motor drives
- Switch mode power supplies
- Power factor correction
Procurement Notes
Verify the specific manufacturer datasheet revision against procurement requirements. Confirm that the TO-247-3L package marking matches the required identification code. Ensure compliance with RoHS and REACH directives as specified in the official documentation before finalizing orders.
Selection Notes
Select this component for high-frequency applications requiring minimal switching losses. Evaluate thermal management based on the 0.42°C/W junction-to-case resistance. Consider the 1200V rating for robustness against voltage transients in industrial power conversion systems.
Part Context
This part belongs to the Amp+ series of Silicon Carbide Schottky diodes manufactured by SemiQ. The series is designed for high-efficiency power electronics, leveraging SiC material properties to outperform traditional silicon rectifiers in terms of speed and thermal performance.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
FAQ
What is the reverse recovery time of the GP2D040A120U?
The device has a zero reverse recovery time, characteristic of its Silicon Carbide Schottky technology.
What is the maximum operating junction temperature?
The continuous operating and storage temperature range extends up to 175°C.
How does the forward voltage vary with temperature?
The forward voltage decreases as the junction temperature increases, as shown in the forward characteristics graph parameterized on Tj.
