GP2D050A120B

Description：DIODE SIL CARB 1200V 50A TO2472
Series：Amp+™
Mfr：SemiQ
Package：Tube

SKU:accf1943e8d6 Category: Single Diodes Brand: SemiQ

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Product introduction

Product Detailed Parameters

Description：DIODE SIL CARB 1200V 50A TO2472
Series：Amp+™
Mfr：SemiQ
Package：Tube
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：1200 V
Current - Average Rectified (Io)：50A
Voltage - Forward (Vf) (Max) @ If：1.8 V @ 50 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：0 ns
Current - Reverse Leakage @ Vr：100 µA @ 1200 V
Capacitance @ Vr, F：3174pF @ 1V, 1MHz
Mounting Type：Through Hole
Package / Case：TO-247-2
Supplier Device Package：TO-247-2
Operating Temperature - Junction：-55°C ~ 175°C
Grade：-
Qualification：-

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GP2D050A120B

Overview

The GP2D050A120B is a 1200V Silicon Carbide Schottky diode from the Amp+ series, housed in a TO-247-2L package. It features a maximum continuous forward current of 157 A at 25°C and a repetitive peak reverse voltage of 1200 V. The device exhibits zero reverse recovery time with a total capacitive charge of 216 nC. Key electrical parameters include a typical forward voltage of 1.60 V at 50 A and 25°C, and a junction-to-case thermal resistance of 0.18 °C/W.

Feature Summary

Zero reverse recovery current enabling fast, temperature-independent switching
High surge current capability for robust operation under transient conditions
Unipolar rectifier design ensuring zero switching loss and higher efficiency

Applications

Motor drives
Switch mode power supplies
Power factor correction

Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm RoHS compliance status against EU Directive 2011/65/EC requirements prior to integration. Ensure proper handling procedures are followed due to the semiconductor nature of the device. Review datasheet specifications thoroughly to validate suitability for specific thermal and electrical operating environments.

Selection Notes

Select this component for high-frequency applications requiring minimal switching losses. Evaluate thermal management capabilities based on the specified junction-to-case resistance. Consider the device's unipolar characteristics for improved system efficiency compared to traditional silicon alternatives. Verify that the TO-247-2L package aligns with existing board layout constraints and mounting torque specifications.

Part Context

This part belongs to the Amp+ series of Silicon Carbide Schottky diodes manufactured by SemiQ. The series is designed to offer superior performance over conventional silicon devices, particularly in terms of switching speed and thermal stability. The TO-247-2L package provides a robust mechanical structure suitable for high-power industrial applications.