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Product Detailed Parameters
- Description：SIC MOSFET
- Series：-
- Mfr：SemiQ
- Package：Tube
- FET Type：N-Channel
- Technology：SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss)：1700 V
- Current - Continuous Drain (Id) @ 25°C：83A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：20V
- Rds On (Max) @ Id, Vgs：36mOhm @ 60A, 20V
- Vgs(th) (Max) @ Id：4V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs：233 nC @ 20 V
- Vgs (Max)：+25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds：6202 pF @ 1.2 kV
- FET Feature：-
- Power Dissipation (Max)：564W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-4
- Package / Case：TO-247-4
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Overview
The SemiQ GP2T030A170H is a silicon carbide (SiC) MOSFET designed for high-power applications. It features a 1700V drain-source breakdown voltage and a continuous drain current of 66A. The device exhibits a low on-resistance of 38mΩ, contributing to efficient power handling with a maximum power dissipation of 429W. It utilizes TO-247-4L packaging for robust thermal management and reliable operation in demanding environments.
Feature Summary
- Utilizes silicon carbide technology for superior thermal performance and high-voltage capability
- Features low on-resistance to minimize conduction losses during operation
- Designed with a rugged package structure for enhanced mechanical stability
Applications
- High-efficiency DC-DC converters
- Industrial motor drives
- Uninterruptible power supplies
Procurement Notes
Verify the specific suffix and marking code against the manufacturer's official datasheet to ensure exact electrical parameter matching. Confirm that the TO-247-4L pinout configuration aligns with your PCB footprint design requirements before finalizing procurement decisions.
Selection Notes
Select this component when designing circuits requiring high blocking voltage combined with moderate current levels. The low gate charge characteristics support efficient switching frequencies, making it suitable for compact power supply designs where thermal efficiency is critical.
Part Context
This part belongs to the SemiQ silicon carbide MOSFET family, which focuses on replacing traditional silicon devices in high-performance power electronics. The series offers improved energy efficiency and reduced system size compared to conventional solutions.
Replacement Considerations
Consult official substitution lists for compatible SiC MOSFETs with similar voltage and current ratings. Ensure any alternative maintains comparable thermal resistance and gate drive specifications.
