GP2T040A120U

$9.54

Description：SIC MOSFET 1200V 40M TO-247-3L
Series：-
Mfr：SemiQ
Package：Tube

SKU:f0a77ed07454 Category: Single FETs, MOSFETs Brand: SemiQ

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Product introduction

Product Detailed Parameters

Description：SIC MOSFET 1200V 40M TO-247-3L
Series：-
Mfr：SemiQ
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：52mOhm @ 40A, 20V
Vgs(th) (Max) @ Id：4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs：118 nC @ 20 V
Vgs (Max)：+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds：3192 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：322W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

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GP2T040A120U

Overview

The GP2T040A120U is a Silicon Carbide (SiC) MOSFET manufactured by SemiQ, designed for high-efficiency power switching applications. It features an N-channel configuration housed in a TO-247-3L through-hole package. Key electrical specifications include a drain-source breakdown voltage (Vds) of 1200 V and a maximum on-resistance (Rds(on)) of 40 mOhms. The device supports a continuous drain current of 63 A at case temperature and handles up to 322 W of power dissipation. It operates within a junction temperature range of -55°C to +175°C, with a gate-source voltage limit of ±20 V and a typical threshold voltage of 2.8 V.

Feature Summary

Utilizes Silicon Carbide technology for superior thermal performance and high-temperature operation up to 175°C.
Features low on-resistance to minimize conduction losses in high-current switching scenarios.
Designed for robust performance in harsh environments with extended operating temperature ranges.

Applications

High-frequency DC-DC converters
Industrial motor drives
Uninterruptible power supplies (UPS)
Solar inverters

Procurement Notes

Verify the specific datasheet version from SemiQ or authorized distributors to confirm exact electrical limits and mechanical dimensions. Ensure compatibility with existing PCB footprints for the TO-247-3L package. Check for any recent product change notifications regarding material composition or testing standards before finalizing procurement plans.

Selection Notes

Select this component when high voltage blocking capability and low conduction loss are critical. Compare Rds(on) and gate charge requirements against system efficiency targets. Ensure the thermal management solution can handle the specified power dissipation at the expected ambient temperatures. Verify that the gate drive voltage aligns with the ±20 V rating.

Part Context

This part belongs to SemiQ's portfolio of discrete Silicon Carbide MOSFETs. It is part of a series offering various current ratings and on-resistance values within the same package family, allowing designers to scale power density while maintaining consistent mounting and thermal interface characteristics across different power levels.

Replacement Considerations

Direct pin-to-pin replacements may include other 1200V SiC MOSFETs in TO-247 packages with similar Rds(on) and current ratings. Verify gate charge and switching speed parameters to ensure compatibility with existing gate driver circuits without modification.