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Product Detailed Parameters
- Description：SIC MOSFET 1200V 80M TO-247-4L
- Series：-
- Mfr：SemiQ
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：20V
- Rds On (Max) @ Id, Vgs：100mOhm @ 20A, 20V
- Vgs(th) (Max) @ Id：4V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs：61 nC @ 20 V
- Vgs (Max)：+25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds：1377 pF @ 1000 V
- FET Feature：-
- Power Dissipation (Max)：188W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-4
- Package / Case：TO-247-4
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Overview
The GP2T080A120H is a Silicon Carbide (SiC) MOSFET manufactured by SemiQ. It features an N-Channel configuration housed in a TO-247-3 package designed for through-hole mounting. The device supports a drain-source breakdown voltage of 1.2 kV and maintains a maximum on-resistance of 80 mOhms. Gate-source voltage limits range from -5 V to +20 V, with a threshold voltage of 2.8 V. Key switching characteristics include a gate charge of 58 nC, a fall time of 10 ns, and a rise time of 6 ns. Power dissipation is rated at 188 W, operating within a temperature range of -55 C to +175 C.
Feature Summary
- Utilizes Silicon Carbide technology for high-voltage operation up to 1.2 kV
- Optimized low on-resistance of 80 mOhms for efficient conduction
- Fast switching performance with 6 ns rise and 10 ns fall times
- Robust thermal capability supporting operation up to 175 C
Applications
- High-frequency power conversion systems
- Industrial motor drive inverters
- Uninterruptible power supply (UPS) circuits
- Solar micro-inverter topologies
Procurement Notes
Verify the specific suffix against official documentation to confirm pinout compatibility and exact electrical tolerances. Confirm RoHS compliance status via the manufacturer's current datasheet before integration. Ensure the selected package variant matches the intended PCB footprint requirements for reliable assembly.
Selection Notes
Select this component when a 1.2 kV rating is required alongside low conduction losses. The 80 mOhm resistance offers a balance between efficiency and cost for medium-current applications. Consider the TO-247-3 package for standard through-hole thermal management solutions in industrial environments.
Part Context
This part belongs to the SemiQ GP2T series of silicon carbide MOSFETs. The series focuses on high-efficiency switching capabilities using advanced SiC planar technology. These devices are engineered to replace traditional silicon IGBTs in demanding power electronics applications requiring higher frequency operation.
Replacement Considerations
Consult official substitution lists for direct equivalents. Verify that any alternative device matches the 1.2 kV voltage class, 80 mOhm resistance limit, and TO-247-3 package dimensions to ensure mechanical and electrical compatibility.
