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Product Detailed Parameters
- Description：DIODE SIC 650V 8A TO263-2L
- Series：-
- Mfr：SemiQ
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：-
- Voltage - DC Reverse (Vr) (Max)：650 V
- Current - Average Rectified (Io)：10A
- Voltage - Forward (Vf) (Max) @ If：-
- Speed：-
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：-
- Capacitance @ Vr, F：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Operating Temperature - Junction：-
- Grade：-
- Qualification：-
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Overview
The GP3D010A065D is a Gen 3 Silicon Carbide (SiC) Schottky diode rated for 650V and 10A in a TO-263-2L package. It operates with near zero switching loss and features no reverse recovery current. The device withstands 67mJ avalanche energy testing and passes voltage tests exceeding 715V. Designed as a unipolar rectifier, it offers fast switching unaffected by temperature changes.
Feature Summary
- Unipolar rectifier with surge current capability
- Zero reverse recovery current for minimal switching loss
- Fast switching performance independent of temperature variations
- Validated against 67mJ avalanche energy stress
Applications
- Electric vehicle charging systems
- Solar inverters
- Induction heating
- Fuel cell power generation
Procurement Notes
Verify the specific suffix 'D' corresponds to the TO-263-2L surface mount package configuration. Confirm RoHS compliance status through official manufacturer documentation or authorized distributor certificates prior to procurement. Ensure the ordering part number matches the exact electrical ratings and thermal characteristics required for the target circuit design.
Selection Notes
Select this component for high-frequency applications requiring low switching losses. The SiC material enables operation at higher temperatures compared to silicon alternatives. Consider the TO-263-2L footprint for PCB layout constraints. Evaluate thermal management requirements based on the 10A continuous current rating and expected ambient conditions.
Part Context
This device belongs to SemiQ's QSiC Schottky Diode family, specifically the Gen 3 series. It complements other variants like the GP3D010A065B which utilizes a TO-247-2L leaded package. The product line targets high-efficiency power conversion solutions across industrial and automotive sectors.
Replacement Considerations
Direct substitutes include other 650V 10A SiC Schottky diodes in TO-263-2L packages from manufacturers such as Wolfspeed or ROHM. Verify pinout compatibility and thermal resistance parameters when cross-referencing with alternative brands.
