GP3D010A120B

Overview

The GP3D010A120B is a Silicon Carbide (SiC) Schottky diode manufactured by SemiQ. It features a single configuration in a TO-247-2 through-hole package. Key electrical parameters include a maximum repetitive reverse voltage of 1200 V and a forward current rating of 10 A. The device exhibits a typical forward voltage of 1.52 V at rated conditions and a low reverse leakage current of 3 uA. It supports a forward surge current of 135 A and operates within a junction temperature range of -55°C to +175°C. Power dissipation is rated at 177 W.

Feature Summary

• Utilizes Silicon Carbide technology for near-zero switching loss characteristics, significantly increasing system efficiency.
• Schottky barrier construction eliminates reverse recovery charge, reducing switching losses and electromagnetic interference.
• Designed for high-temperature operation with a maximum junction temperature capability of +175°C.

Applications

• High-frequency power conversion systems
• Uninterruptible power supplies (UPS)
• Solar inverters and photovoltaic applications

Procurement Notes

Verify the specific suffix 'B' against official SemiQ documentation to confirm pinout and thermal characteristics, as suffixes may indicate variations. Cross-reference the TO-247-2 package dimensions with your PCB footprint requirements. Ensure the 1200V rating aligns with your circuit's peak inverse voltage demands. Confirm RoHS compliance status via the manufacturer's latest datasheet before integration.

Selection Notes

Select this component when designing circuits requiring low reverse recovery charge and high-temperature stability. The 1200V rating suits medium-voltage DC links. Compare the 10A continuous current limit against your load profile. Consider the TO-247-2 package for ease of heatsinking in through-hole assemblies. Evaluate thermal resistance values from the datasheet to determine adequate cooling solutions for the 177W dissipation rating.

Part Context

This part belongs to SemiQ's GP3D series of Silicon Carbide Schottky diodes. The series is characterized by fast switching speeds and robust performance in harsh environments. The GP3D010A120B specifically targets applications needing reliable rectification at 1200V blocking voltage. It complements other SemiQ SiC components for complete power stage designs.

Replacement Considerations

Direct substitutes must match the 1200V/10A SiC Schottky specification in a TO-247-2 package. Verify equivalent forward voltage and reverse leakage current to maintain thermal performance. Check pin compatibility if replacing in existing footprints. Consult manufacturer cross-reference lists for validated alternatives.

FAQ

What is the maximum operating junction temperature for the GP3D010A120B?

The maximum operating junction temperature is +175°C.

Does the GP3D010A120B exhibit reverse recovery charge?

No, as a Schottky diode, it operates with near-zero switching loss and negligible reverse recovery charge.

What is the package type for this component?

The component is housed in a TO-247-2 through-hole package.