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The GP3D020A065A is a Silicon Carbide (SiC) Schottky diode manufactured by SemiQ, designed for high-efficiency power conversion applications. It features a single configuration housed in a TO-220-2 through-hole package. Key electrical parameters include a maximum repetitive reverse voltage (Vrrm) of 650 V and a forward current (If) of 20 A. The device exhibits a typical forward voltage (Vf) of 1.52 V at rated conditions and supports a forward surge current (Ifsm) of 135 A. With a low reverse leakage current of 3 uA and a power dissipation rating of 176 W, it operates within a temperature range of -55°C to +175°C.
Verify the specific suffix designation against the manufacturer's latest datasheet to confirm pinout compatibility and thermal resistance values. Ensure that the procurement documentation explicitly references the TO-220-2 package variant to avoid confusion with other SemiQ series components. Cross-reference the RoHS compliance status with current regulatory requirements before finalizing orders.
Select this component when designing circuits requiring a 650V blocking capability with moderate current handling up to 20A. The TO-220-2 package is suitable for applications where board space allows for through-hole mounting but requires efficient heat sinking. Consider the 1.52V forward voltage drop for efficiency calculations in low-voltage output stages.
This part belongs to SemiQ's GP3D series of discrete SiC Schottky diodes. The series offers various voltage ratings and current capacities in standard through-hole packages. The GP3D020A065A specifically targets the 650V segment, providing an alternative to traditional silicon rectifiers in medium-power industrial and consumer electronics applications.
Direct replacements must match the 650V/20A specification and TO-220-2 footprint. Verify thermal resistance and forward voltage characteristics against original design margins. No specific substitute part numbers are publicly confirmed for direct cross-referencing.