GP3D020A065U

GP3D020A065U

$4.50
  • Description:DIODE ARRAY SIC 650V 10A TO247-3
  • Series:Amp+™

SKU:1b8241d1c6a3 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE ARRAY SIC 650V 10A TO247-3
  • Series:Amp+™
  • Mfr:SemiQ
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max):650 V
  • Current - Average Rectified (Io) (per Diode):10A
  • Voltage - Forward (Vf) (Max) @ If:1.6 V @ 10 A
  • Speed:No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr):0 ns
  • Current - Reverse Leakage @ Vr:25 µA @ 650 V
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247-3
  • Grade:-
  • Qualification:-

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GP3D020A065U

Overview

The GP3D020A065U is a Silicon Carbide Schottky diode manufactured by SemiQ, housed in a TO-247-3 package. It features a single configuration with a maximum repetitive reverse voltage of 650 V and a forward current rating of 10 A to 20 A depending on specific datasheet conditions. The device exhibits a typical forward voltage of approximately 1.5 V to 1.52 V at rated current. Power dissipation ranges from 97 W to 176 W based on thermal conditions. Operating temperature spans from -55°C to +175°C, with a non-repetitive peak surge current capability up to 135 A.

Feature Summary

  • Utilizes Silicon Carbide (SiC) technology for high-efficiency rectification
  • Features a Schottky barrier structure to minimize switching losses
  • Designed for through-hole mounting in robust power applications

Applications

  • Uninterruptible Power Supply (UPS) systems
  • Inverter circuits
  • Automotive power electronics

Procurement Notes

Verify the specific forward current rating (10 A or 20 A) and power dissipation value against the official SemiQ datasheet, as sources vary between 97 W and 176 W. Confirm the exact package variant (TO-247-3 vs TO-247-3L) required for your thermal management design. Ensure compatibility with wave soldering processes if applicable. Cross-reference the manufacturer's latest documentation to confirm RoHS compliance status and lead time requirements before finalizing procurement.

Selection Notes

Select this component for applications requiring high-temperature operation up to 175°C and low forward voltage drop. Consider the trade-off between the 650V blocking capability and the specific current rating needed for your load. Evaluate thermal resistance requirements given the varying power dissipation ratings found in different source documents. Ensure the TO-247-3 form factor fits the mechanical constraints of the target assembly.

Part Context

This part belongs to the SemiQ GP3D series of Silicon Carbide Schottky diodes. The series includes variants such as GP3D006A065A and GP3D040A065U, offering different current ratings within the same 650V voltage class. These components are designed to replace traditional silicon diodes in high-frequency and high-temperature environments to improve system efficiency.

Replacement Considerations

Direct substitutes may include other 650V SiC Schottky diodes in TO-247 packages from manufacturers like Wolfspeed or STMicroelectronics, provided they meet the 10A/20A current and 175°C temperature requirements. Verify pinout compatibility and thermal characteristics when swapping brands.

GP3D020A065UGP3D020A065U
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