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Product Detailed Parameters
- Description：DIODE ARR SIC 1200V 30A TO247-3
- Series：Amp+™
- Mfr：SemiQ
- Package：Tube
- Diode Configuration：-
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：1200 V
- Current - Average Rectified (Io) (per Diode)：30A
- Voltage - Forward (Vf) (Max) @ If：1.7 V @ 30 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：60 µA @ 1200 V
- Operating Temperature - Junction：-55°C ~ 175°C
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The GP3D060A120U is a silicon carbide Schottky diode manufactured by SemiQ. It features a 1200V reverse voltage rating and a continuous forward current of 30A in a TO-247-3L package. The device operates within a temperature range of -55°C to +175°C, with a maximum power dissipation of 280W at 25°C case temperature. Key electrical characteristics include a forward voltage of 2.3V at 30A and a reverse leakage current of 2µA. The component supports a forward surge current of 265A and utilizes through-hole mounting for robust integration.
Feature Summary
- Utilizes silicon carbide technology for high-temperature operation up to 175°C
- Features low reverse leakage current for improved efficiency
- Designed for high surge current handling capabilities
Applications
- Uninterruptible Power Supplies (UPS)
- Inverter systems
- Automotive electronics
Procurement Notes
Verify the specific datasheet version when sourcing, as manufacturers may update specifications. Confirm that the TO-247-3L package variant matches the required PCB footprint. Ensure thermal management solutions support the specified power dissipation limits under actual operating conditions.
Selection Notes
Select this component for applications requiring high voltage blocking and elevated temperature stability. The silicon carbide construction offers superior performance compared to traditional silicon diodes in high-frequency switching environments. Consider the thermal resistance characteristics when designing heat sinks for sustained high-current operations.
Part Context
This part belongs to SemiQ's portfolio of silicon carbide power devices. It is categorized under diode arrays or single Schottky diodes depending on the specific configuration. The product line targets high-efficiency power conversion systems where reliability and thermal performance are critical requirements.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires matching voltage, current, and package specifications from alternative manufacturers.
