GP3T080A120H

$4.87

Description：GEN3 1200V, 80M SIC MOSFET, TO-2
Series：QSiC™
Mfr：SemiQ
Package：Tube

SKU:22227db525b1 Category: Single FETs, MOSFETs Brand: SemiQ

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Product introduction

Product Detailed Parameters

Description：GEN3 1200V, 80M SIC MOSFET, TO-2
Series：QSiC™
Mfr：SemiQ
Package：Tube
FET Type：N-Channel
Technology：SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：18V
Rds On (Max) @ Id, Vgs：100mOhm @ 10A, 18V
Vgs(th) (Max) @ Id：4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs：53 nC @ 18 V
Vgs (Max)：+22V, -8V
Input Capacitance (Ciss) (Max) @ Vds：1351 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：147W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4
Package / Case：TO-247-4

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GP3T080A120H

Overview

The GP3T080A120H is a QSiC™ 1200V SiC MOSFET in a TO-247-4L package. It features an 80 mΩ drain-source on-resistance and a continuous drain current of 32 A at 25°C. The device supports a maximum junction temperature of 175°C and includes a dedicated driver source pin for optimized gate driving.

Feature Summary

Includes a dedicated driver source pin to facilitate gate driving
Features avalanche testing up to 160mJ for enhanced reliability
Provides longer creepage distance within the package design

Applications

Solar Inverters
Switch mode power supplies, UPS
Induction heating and welding
EV charging stations
High voltage DC/DC converters
Motor drives

Procurement Notes

Verify component authenticity by checking the manufacturer's official documentation against the provided datasheet specifications. Confirm that the ordering suffix matches the exact part number GP3T080A120H to ensure correct package type and electrical characteristics. Ensure compliance with RoHS and REACH requirements as specified by the manufacturer.

Selection Notes

Select this component for high-voltage applications requiring robust switching performance. The TO-247-4L package offers thermal advantages and a dedicated driver source pin. Consider the 1200V rating and 80 mΩ resistance when designing circuits for solar inverters or EV charging infrastructure.

Part Context

This component belongs to SemiQ's QSiC™ series of silicon carbide MOSFETs. It utilizes advanced wide-bandgap technology to achieve lower capacitance and higher system efficiency compared to traditional silicon devices. The product line focuses on high-speed switching capabilities for modern power electronics.