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The GPA040A120L-FD is a trench field-stop IGBT module manufactured by SemiQ. It features a 1200V drain-source breakdown voltage and supports a continuous drain current of 80A. The device has a power dissipation rating of 480W and utilizes a TO-264 through-hole package. It operates within a temperature range extending up to +175°C maximum junction temperature.
Verify the exact datasheet version with the manufacturer or authorized distributor before integration. Confirm that the TO-264 package dimensions match your PCB footprint requirements. Ensure thermal management solutions are adequate for the specified 480W power dissipation under your specific operating conditions.
Select this component when a high-voltage, high-current IGBT with through-hole mounting is required. Consider the 1200V rating for system isolation needs. Evaluate thermal resistance characteristics against your heatsink design to ensure reliable operation at the maximum rated current of 80A.
This part belongs to SemiQ's discrete semiconductor transistor lineup, specifically focusing on MOSFET and IGBT modules. It represents a standard offering in their power electronics portfolio designed for medium to high-power switching applications requiring robust reliability.
Check for direct substitutes such as the GPA040A120L-ND variant, which shares similar electrical specifications but may differ in packaging or minor parameters. Verify pin compatibility and thermal characteristics before substitution.