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The GPA040A120L-ND is a 1200V NPT and Trench IGBT from SemiQ, housed in a TO-264 through-hole package. It features a continuous collector current of 80A and a pulsed current capability of 120A. The device has a power dissipation rating of 455W and a collector-emitter breakdown voltage of 1200V.
Verify the exact part number against official SemiQ documentation to ensure compatibility with system requirements. Confirm that the TO-264 package dimensions match your PCB layout. Check for any specific thermal management needs associated with the 455W power dissipation rating during operation.
Select this component when a 1200V IGBT with 80A continuous current is required. Consider the TO-264 package for through-hole assembly. Evaluate thermal resistance parameters if operating near maximum power dissipation limits. Ensure gate drive voltage compatibility with standard IGBT drivers.
This IGBT belongs to SemiQ's discrete semiconductor lineup, focusing on high-voltage power switching. It complements other components like the GP3T034A120H SiC MOSFET by offering alternative silicon-based solutions for similar voltage classes but with different switching characteristics and package options.
Public confirmed substitute part numbers are not available in the provided data. Cross-reference with other 1200V, 80A TO-264 IGBTs from various manufacturers only after verifying pinout and electrical parameter compatibility.