GPA060A060MN-FD

GPA060A060MN-FD

  • Description:IGBT TRENCH FS 600V 120A TO-3PN
  • Series:-

SKU:ce3071b10e0d Category: Brand:

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Product Detailed Parameters

  • Description:IGBT TRENCH FS 600V 120A TO-3PN
  • Series:-
  • Mfr:SemiQ
  • Package:Tube
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):120 A
  • Current - Collector Pulsed (Icm):180 A
  • Vce(on) (Max) @ Vge, Ic:2.3V @ 15V, 60A
  • Power - Max:347 W
  • Switching Energy:2.66mJ (on), 1.53mJ (off)
  • Input Type:Standard
  • Gate Charge:225 nC
  • Td (on/off) @ 25°C:45ns/150ns
  • Test Condition:400V, 60A, 10Ohm, 15V
  • Reverse Recovery Time (trr):140 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-3P-3, SC-65-3
  • Supplier Device Package:TO-3PN
  • Grade:-
  • Qualification:-

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GPA060A060MN-FD

Overview

The GPA060A060MN-FD is a silicon carbide (SiC) Schottky barrier diode module manufactured by SemiQ. It features a parallel power configuration housed in a SOT-227-4 package with screw mount installation. The device supports a reverse voltage of 600 V and a forward current of 30 A, with a typical forward voltage of 1.52 V. It operates within a temperature range of -55°C to +175°C and dissipates up to 347 W of power.

Feature Summary

  • Utilizes silicon carbide technology for high-temperature stability
  • Parallel power module design for enhanced current handling
  • Screw mount installation via SOT-227-4 package

Applications

  • High-frequency power conversion systems
  • Industrial motor drives
  • Uninterruptible power supplies (UPS)
  • Solar inverters

Procurement Notes

Verify the specific suffix 'FD' against the official SemiQ datasheet to confirm pinout and thermal characteristics. Ensure the procurement channel provides valid RoHS compliance documentation. Confirm that the SOT-227-4 package matches the intended PCB or heatsink mounting requirements before finalizing orders.

Selection Notes

Select this component when applications require high-temperature operation exceeding standard silicon limits. The SiC material offers lower switching losses compared to traditional diodes. Consider the 600V rating and 30A continuous current capacity relative to the system's peak load demands and thermal management capabilities.

Part Context

This part belongs to SemiQ's portfolio of discrete and power modules, specifically their SiC Schottky Diode line. It complements other SemiQ products like MOSFETs and IGBTs, providing complete solutions for power electronics. The SOT-227-4 form factor allows for standardized integration into existing industrial power designs.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source data. Consult the official SemiQ datasheet for direct replacements or cross-reference with similar SOT-227-4 packaged SiC diodes from other manufacturers, ensuring electrical parameters match.

GPA060A060MN-FDGPA060A060MN-FD

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