GPI65008DF68

Single FETs, MOSFETs Overview

The GPI65008DF68 is an N-channel 650V GaN Power HEMT in a 6x8 DFN package. It features a typical RDS(on) of 170 mΩ, Ids of 8A, and Qg of 2.1 nC. The device has a BVdss of 650 V, Ciss of 63 pF, and zero reverse recovery charge (Qrr). Absolute maximum ratings include VDS-max of 800 V, VGS-max of -12 to +7.5 V, and TJ-max of 150°C. Thermal resistance is 2.2 °C/W (junction-to-case) and 62 °C/W (junction-to-ambient).

Single FETs, MOSFETs Feature Summary

• Ultra-low on-state resistance for superior power density.
• Extremely low input capacitance enabling ultra-high switching frequencies.
• Zero reverse recovery charge eliminating body diode issues.
• High dv/dt capability with outstanding switching performance.

Single FETs, MOSFETs Applications

• Switching power applications
• Adapters
• Quick chargers

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet version (e.g., v1.2) against your design requirements. Confirm that the 6x8 DFN bottom-cooled package aligns with your PCB thermal management strategy. Ensure gate drive circuits accommodate the unique voltage thresholds and high slew rates inherent to E-mode GaN technology.

Single FETs, MOSFETs Selection Notes

Select this component when high efficiency at elevated switching frequencies is critical. The low Qg and Ciss reduce switching losses significantly compared to silicon counterparts. Consider the negative gate tolerance (-12V) for robust noise immunity in half-bridge configurations.

Single FETs, MOSFETs Part Context

This device utilizes proprietary E-mode GaN on silicon technology. It serves as a high-performance alternative to traditional silicon MOSFETs in compact power stages. The DFN package facilitates efficient heat dissipation through the bottom thermal pad.

Single FETs, MOSFETs Replacement Considerations

GaN HEMTs are not direct pin-to-pin replacements for silicon MOSFETs or IGBTs due to different gate driving requirements and high dv/dt characteristics. Specialized drivers and optimized PCB layouts are necessary to manage circuit parasitics effectively.

Single FETs, MOSFETs FAQ

Can this device replace a silicon MOSFET directly?

No. Due to different gate driving voltage requirements and extremely high dv/dt slew rates, special drivers and optimized PCB layouts are recommended to minimize the impact from circuit parasitics.

Is an external Freewheeling Diode (FRD) needed?

No. GaN devices have no inherent PN junction diodes causing reverse recovery issues. They can operate in both first and third quadrants without paralleling an FRD.