GPI65060DFC

$28.05

Description：GaNFET N-CH 650V 60A DFN8x8 cu
Series：-
Mfr：GaNPower
Package：Tape & Reel (TR)

SKU:7162c6ded63f Category: Single FETs, MOSFETs Brand: GaNPower

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Product introduction

GPI65060DFC is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists GaNPower. Its product description is GaNFET N-CH 650V 60A DFN8x8 cu. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for GPI65060DFC

Description：GaNFET N-CH 650V 60A DFN8x8 cu
Series：-
Mfr：GaNPower
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：60A
Drive Voltage (Max Rds On, Min Rds On)：6V
Rds On (Max) @ Id, Vgs：30mOhm @ 6A, 12V
Vgs(th) (Max) @ Id：1.2V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs：16 nC @ 6 V
Vgs (Max)：+7.5V, -12V
Input Capacitance (Ciss) (Max) @ Vds：420 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-DFN (8x8)
Package / Case：8-DFN

Single FETs, MOSFETs datasheet and documents for GPI65060DFC

GPI65060DFC

Single FETs, MOSFETs Overview

The GPI65060DFC is an N-channel 650V GaN Power HEMT in a DFN8x8 package. It features a 700V breakdown voltage, 25mΩ typical RDS(on), and 60A continuous drain current. The device integrates a lossless source-side GaN current sensing IC with zero reverse recovery charge (Qrr). Key electrical parameters include 16nC gate charge, 420pF input capacitance, and a 200 V/ns dv/dt capability. Thermal resistance is 0.6°C/W junction-to-case.

Single FETs, MOSFETs Feature Summary

Integrates a unique lossless source-side GaN current sensing IC for accurate monitoring without external shunt resistors.
Features ultra-low on-state resistance and extremely low input capacitance to enable superior power density and high switching frequencies.
Provides zero reverse recovery charge and outstanding switching performance suitable for demanding power conversion applications.

Single FETs, MOSFETs Applications

Switching power applications
Server and telecom power supplies
EV onboard chargers (OBC) and DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet version (v1.4) against your design requirements. Confirm that the DFN8x8 QFN/DFN-Tray packaging aligns with your assembly capabilities. Ensure the integrated current sensing IC meets your system's accuracy needs. Check absolute maximum ratings for transient voltages and thermal limits during final validation.

Single FETs, MOSFETs Selection Notes

Select this component when high power density and ultra-high switching frequency are required. The integrated current sensing simplifies design by removing external shunts. Consider the 25mΩ RDS(on) for efficiency targets. Evaluate the 60A current rating against peak load demands. The DFN8x8 package offers a compact footprint for space-constrained designs.

Single FETs, MOSFETs Part Context

This device utilizes proprietary E-mode GaN on silicon technology. It is designed to replace traditional silicon MOSFETs in high-performance power stages. The integration of sensing capabilities distinguishes it from standard discrete GaN FETs. It targets modern power electronics requiring reduced component count and improved thermal management.

Single FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and thermal characteristics if considering alternative manufacturers' devices. Ensure any replacement supports the required 650V blocking voltage and similar current handling capabilities.