GPI90007DF88

$3.72

Description：GaNFET N-CH 900V 7A DFN8x8
Series：-
Mfr：GaNPower
Package：Tape & Reel (TR)

SKU:3d84b524c376 Category: Single FETs, MOSFETs Brand: GaNPower

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Product introduction

GPI90007DF88 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists GaNPower. Its product description is GaNFET N-CH 900V 7A DFN8x8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for GPI90007DF88

Description：GaNFET N-CH 900V 7A DFN8x8
Series：-
Mfr：GaNPower
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：900 V
Current - Continuous Drain (Id) @ 25°C：7A
Drive Voltage (Max Rds On, Min Rds On)：6V
Rds On (Max) @ Id, Vgs：225mOhm @ 1.4A, 6V
Vgs(th) (Max) @ Id：1.2V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs：2.1 nC @ 6 V
Vgs (Max)：+7.5V, -12V
Input Capacitance (Ciss) (Max) @ Vds：60 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-DFN (8x8)
Package / Case：8-DFN

Single FETs, MOSFETs datasheet and documents for GPI90007DF88

GPI90007DF88

Single FETs, MOSFETs Overview

The GPI90007DF88 is a single N-channel enhancement mode GaN FET from GaNPower International Inc. It features a 900V drain-source breakdown voltage and a DFN surface mount package with bottom cooling dimensions of 8x8 mm. The device exhibits a typical on-resistance of 225 mΩ at 6V gate drive and 1.4A current. Key dynamic parameters include a total gate charge of 2.1 nC and zero reverse recovery charge. Absolute maximum ratings specify a pulsed drain current of 16 A and a maximum junction temperature of 150°C.

Single FETs, MOSFETs Feature Summary

Zero reverse recovery charge for lossless switching
Bottom-cooled DFN package for thermal efficiency
High breakdown voltage capability

Single FETs, MOSFETs Applications

High frequency DC/DC converters
Class D audio amplifiers
Wireless power transfer systems

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision before design finalization, as test data may be subject to change without notice. Confirm that the application does not involve life-sustaining or military systems, as these uses are explicitly excluded by the manufacturer's warranty disclaimers. Ensure proper handling procedures are followed for the surface-mount component.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high power density and fast switching speeds. The 900V rating supports high-voltage bus applications. Consider the 225 mΩ on-resistance for conduction loss calculations at the target operating current. The bottom-cooled package requires appropriate PCB thermal management strategies to maintain junction temperatures within the specified limits.

Single FETs, MOSFETs Part Context

This part belongs to the GaNPower International Inc. portfolio of wide-bandgap semiconductor devices. It utilizes Gallium Nitride technology to achieve superior performance compared to traditional silicon MOSFETs in terms of switching speed and efficiency. The DFN packaging format facilitates compact circuit board layouts.