GPI90010DF88

$5.31

Description：GaNFET N-CH 900V 10A DFN8x8
Series：-
Mfr：GaNPower
Package：Tape & Reel (TR)

SKU:4e43ccffe976 Category: Single FETs, MOSFETs Brand: GaNPower

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Product introduction

GPI90010DF88 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists GaNPower. Its product description is GaNFET N-CH 900V 10A DFN8x8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for GPI90010DF88

Description：GaNFET N-CH 900V 10A DFN8x8
Series：-
Mfr：GaNPower
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：900 V
Current - Continuous Drain (Id) @ 25°C：10A
Drive Voltage (Max Rds On, Min Rds On)：6V
Rds On (Max) @ Id, Vgs：162mOhm @ 2.5A, 6V
Vgs(th) (Max) @ Id：1.2V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs：2.6 nC @ 6 V
Vgs (Max)：+7.5V, -12V
Input Capacitance (Ciss) (Max) @ Vds：78 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-DFN (8x8)
Package / Case：8-DFN

Single FETs, MOSFETs datasheet and documents for GPI90010DF88

GPI90010DF88

Single FETs, MOSFETs Overview

The GPI90010DF88 is an N-channel 900V GaN HEMT in a DFN 8x8 package. It features a typical RDS(on) of 120 mΩ at 25°C and supports 10A continuous DC current, with a 22A pulse rating. Key electrical parameters include a gate threshold voltage of 1.25V, input capacitance of 78 pF, and total gate charge of 2.6 nC. The device exhibits zero reverse recovery charge (Qrr), a maximum junction temperature of 150°C, and a thermal resistance (junction-to-case) of 1.4°C/W.

Single FETs, MOSFETs Feature Summary

Ultra-low on-state resistance for superior power density
Extremely low input capacitance and zero reverse recovery charge
High dv/dt capability with outstanding switching performance

Single FETs, MOSFETs Applications

Switching Power Applications
Server and Telecom Power Application
EV OBC and DC-DC Converters
UPS, Inverters, PV

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet version against the manufacturer's official documentation before integration. Confirm that the DFN 8x8 package dimensions and soldering profile align with your PCB assembly capabilities. Ensure gate drive circuits accommodate the unique voltage requirements and high slew rates inherent to this technology.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high efficiency and compact form factors. The zero Qrr eliminates the need for external freewheeling diodes in certain topologies. Consider the positive temperature coefficient of Rds,on when paralleling devices for higher current capacity.

Single FETs, MOSFETs Part Context

This device utilizes proprietary E-mode GaN on silicon technology. It is designed to replace traditional silicon MOSFETs or IGBTs in applications demanding ultra-high switching frequencies. The architecture provides significantly lower switching losses compared to conventional semiconductor solutions.

Single FETs, MOSFETs Replacement Considerations

Direct pin-to-pin replacement for silicon MOSFETs or IGBTs is not supported due to different gate driving voltage requirements and high dv/dt characteristics. Specialized drivers and optimized PCB layouts are necessary to manage circuit parasitics effectively.

Single FETs, MOSFETs FAQ

Can this device be used as a direct pin-to-pin replacement for silicon MOSFETs?

No. Due to different gate driving voltage requirements and extremely high dv/dt slew rates, special drivers and optimized PCB layouts are recommended.