GPIHV30SB5L

Description：GANFET N-CH 1200V 30A TO263-5L
Series：-
Mfr：GaNPower
Package：Tube

SKU:0cddb6da9351 Category: Single FETs, MOSFETs Brand: GaNPower

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Product introduction

GPIHV30SB5L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists GaNPower. Its product description is GANFET N-CH 1200V 30A TO263-5L. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for GPIHV30SB5L

Description：GANFET N-CH 1200V 30A TO263-5L
Series：-
Mfr：GaNPower
Package：Tube
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：30A
Drive Voltage (Max Rds On, Min Rds On)：6V
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：1.4V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs：8.25 nC @ 6 V
Vgs (Max)：+7.5V, -12V
Input Capacitance (Ciss) (Max) @ Vds：236 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

Single FETs, MOSFETs datasheet and documents for GPIHV30SB5L

GPIHV30SB5L

Single FETs, MOSFETs Overview

The GPIHV30SB5L is an N-channel 1200V Power GaN HEMT in a TO-263-5L package. It features a typical Rdson of 65mΩ, Ids of 30A, and Qg of 8.25nC. The device has a Vgs(th) of 1.4V, Ciss of 236pF, and zero reverse recovery charge (Qrr). Thermal resistance RthJC is 0.9°C/W, with a max junction temperature of 150°C.

Single FETs, MOSFETs Feature Summary

Ultra-low on-state resistance for superior power density
High dv/dt capability and extremely low input capacitance
Zero reverse recovery charge enabling high-frequency operation
Low profile packaging suitable for compact designs

Single FETs, MOSFETs Applications

Switching Power Applications
Server and Telecom Power Applications
EV OBC and DC-DC Converters
UPS, Inverters, PV Systems

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet version against the manufacturer's official documentation to ensure accuracy of electrical parameters. Confirm that the TO-263-5L package configuration matches the required PCB footprint and thermal management strategy. Ensure gate drive circuits are optimized for the device's high dv/dt characteristics and negative voltage requirements.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high efficiency and compact size at voltages up to 1200V. Consider its zero Qrr advantage over silicon MOSFETs and IGBTs. Evaluate the need for specialized drivers due to different gate voltage requirements compared to traditional silicon devices. Assess thermal performance based on the specified junction-to-case resistance.

Single FETs, MOSFETs Part Context

This device belongs to the GaNPower International Inc. GPIHV series of E-mode GaN on silicon technology. It is designed to replace silicon counterparts in high-frequency power conversion systems. The product line targets markets demanding superior power density and ultra-high switching frequencies.

Single FETs, MOSFETs Replacement Considerations

Direct pin-to-pin replacement for silicon MOSFETs or IGBTs is not recommended without circuit redesign. Specialized gate drivers and optimized PCB layouts are necessary to manage parasitics and high slew rates. Verify compatibility with existing thermal solutions.

Single FETs, MOSFETs FAQ

Can this device be used as a direct pin-to-pin replacement for silicon MOSFETs?

No. Due to different gate driving voltage requirements and extremely high dv/dt capabilities, special drivers and optimized PCB layouts are recommended.