GPIHV5DK

Single FETs, MOSFETs Overview

The GPIHV5DK is an N-channel enhancement-mode Gallium Nitride High Electron Mobility Transistor (HEMT) manufactured by GaNPower International Inc. It features a 1200 V drain-source breakdown voltage and a maximum DC drain current of 5 A at 25°C case temperature. The device exhibits a static on-resistance of 260 mΩ and a total gate charge of 1.9 nC. Packaged in a TO-252 form factor, it supports a maximum junction temperature of 150°C and offers a high dv/dt capability of 150 V/ns.

Single FETs, MOSFETs Feature Summary

• Zero reverse recovery charge due to the absence of inherent PN junction diodes
• High dv/dt capability supporting ultra-fast switching transients
• Extremely low input capacitance for reduced drive requirements
• Positive temperature coefficient of on-resistance facilitating parallel operation

Single FETs, MOSFETs Applications

• Switching power applications
• Server and telecom power supplies
• Electric vehicle onboard chargers and DC-DC converters
• Uninterruptible power systems, inverters, and photovoltaic arrays

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet version prior to procurement, as the provided documentation indicates a preliminary status. Confirm that the TO-252 package type aligns with your PCB footprint requirements. Ensure that your gate driver circuitry accounts for the specific voltage thresholds and high slew rates characteristic of this component to prevent false triggering or excessive losses.

Single FETs, MOSFETs Selection Notes

Select this component when system design requires high voltage blocking capabilities combined with low switching losses. The zero reverse recovery charge eliminates the need for external freewheeling diodes in synchronous rectification topologies. Consider the thermal resistance values when designing heat dissipation strategies, particularly for high-current operations where case temperature management is critical for maintaining performance within specifications.

Single FETs, MOSFETs Part Context

This device belongs to the GaNPower International Inc. portfolio of wide bandgap semiconductors. It utilizes proprietary E-mode GaN-on-silicon technology to achieve superior power density compared to traditional silicon counterparts. The product line targets next-generation power conversion systems demanding high efficiency and compact physical dimensions.

Single FETs, MOSFETs Replacement Considerations

GaN HEMTs are not direct pin-to-pin replacements for silicon MOSFETs or IGBTs due to differing gate driving voltage requirements and sensitivity to parasitic inductances. Designers must implement optimized PCB layouts and specialized drivers to manage the high dv/dt characteristics effectively.

Single FETs, MOSFETs FAQ

Is an external Freewheeling Recovery Diode required for inverter applications?

No, an external FRD is not required because the device lacks inherent PN junction diodes that cause reverse recovery issues. The device can operate in both first and third quadrants.

Can multiple units be paralleled for higher current capacity?

Yes, paralleling is supported due to the positive temperature coefficient of the on-resistance and the slightly positive temperature coefficient of the threshold voltage.