SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The GSBC847PN is a complementary NPN and PNP bipolar junction transistor (BJT) array housed in an SOT-363 surface-mount package. It integrates two internally isolated transistors within a single ultra-small footprint, designed for medium power amplification and switching applications. The device features epitaxial die construction and operates across a wide temperature range from -55°C to +150°C. Key electrical parameters include a collector-emitter breakdown voltage of 45V, a continuous collector current of 100mA, and a maximum power dissipation of 200mW. The transition frequency is rated at 100MHz, with DC current gains ranging from 200 to 475 depending on the specific configuration.
Verify component authenticity by checking the manufacturer's official documentation against the physical marking code on the SOT-363 package. Confirm that the ordering suffix matches the standard reel quantity of 3,000 pieces per reel. Ensure compliance with RoHS directives and moisture sensitivity level requirements during storage and handling procedures.
Select this component when space-constrained designs require both NPN and PNP switching capabilities in a single footprint. The SOT-363 package offers a compact alternative to discrete dual transistors. Consider the 45V breakdown voltage and 100mA current limits to ensure suitability for low-to-medium power signal processing tasks.
This part belongs to the BC847 series of small signal transistors, widely used in consumer electronics and industrial control systems. Good-Ark Semiconductor manufactures this complementary pair to provide cost-effective solutions for circuit designers needing matched or independent NPN/PNP pairs in minimal board space.
Compatible substitutes include the BC847PN from Diotec Semiconductor and the BC847PNHE3-TP from Micro Commercial Components. Both alternatives utilize the same SOT-363 package and offer similar electrical characteristics for direct pin-compatible replacement.