FET, MOSFET Arrays GSF7002DW product image

GSF7002DW

$0.21
  • Description:MOSFET 2N-CH 60V 0.34A SOT363
  • Series:-

SKU:f9e5a4110e77 Category: Brand:

  
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GSF7002DW is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Good-Ark Semiconductor. Its product description is MOSFET 2N-CH 60V 0.34A SOT363. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for GSF7002DW

  • Description:MOSFET 2N-CH 60V 0.34A SOT363
  • Series:-
  • Mfr:Good-Ark Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:340mA (Ta)
  • Rds On (Max) @ Id, Vgs:5Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:40pF @ 10V
  • Power - Max:150mW (Ta)
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SOT-363
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for GSF7002DW

GSF7002DW

FET, MOSFET Arrays Overview

The GSF7002DW is a dual N-channel enhancement mode MOSFET in an SOT-363 package. It features a drain-source voltage of 60V and continuous drain current of 340mA. The on-resistance is 5.3Ω at VGS=4.5V. Gate-source voltage is ±20V, with a threshold voltage range of 1V to 2.5V. Power dissipation is 150mW, and thermal resistance from junction to ambient is 833°C/W. Operating temperature ranges from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

  • Advanced MOSFET process technology for high cell density
  • Low on-resistance combined with low gate charge
  • Fast switching capability with reverse body recovery

FET, MOSFET Arrays Applications

  • High efficiency switch mode power supplies
  • General purpose amplification and switching circuits

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer as Good-Ark Semiconductor and confirm the part number GSF7002DW matches the SOT-363 package. Ensure the datasheet version aligns with your design requirements. Check RoHS compliance status through official documentation before procurement.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual N-channel configuration is required. The 60V rating suits low-voltage applications. Verify that the 340mA current limit meets circuit demands. Consider the 5.3Ω on-resistance for power loss calculations in the specific operating environment.

FET, MOSFET Arrays Part Context

This device belongs to the family of dual N-channel MOSFETs designed for surface mount applications. It utilizes silicon technology to provide reliable performance in small form factors. The SOT-363 package allows for efficient PCB space utilization in modern electronic designs.

FET, MOSFET Arrays Replacement Considerations

No verified public substitute part numbers are available in the provided documentation.

FET, MOSFET Arrays FAQ

What is the maximum drain-source voltage?

The maximum drain-source voltage (VDS) is 60V.

What is the typical gate threshold voltage?

The typical gate threshold voltage (VGS(th)) is 1.3V, with a guaranteed range of 1V to 2.5V.

What is the package type?

The GSF7002DW is housed in an SOT-363 package.

GSF7002DWGSF7002DW
$0.21
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