FET, MOSFET Arrays GSFB0305 product image

GSFB0305

$0.36
  • Description:MOSFET 2P-CH 30V 4.2A 6PPAK
  • Series:-

SKU:78770bdc756a Category: Brand:

  
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GSFB0305 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Good-Ark Semiconductor. Its product description is MOSFET 2P-CH 30V 4.2A 6PPAK. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for GSFB0305

  • Description:MOSFET 2P-CH 30V 4.2A 6PPAK
  • Series:-
  • Mfr:Good-Ark Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:4.2A (Ta), 8A (Tc)
  • Rds On (Max) @ Id, Vgs:75mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:820pF @ 15V
  • Power - Max:1.9W (Ta), 7.4W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-WDFN Exposed Pad
  • Supplier Device Package:6-PPAK (2x2)
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for GSFB0305

GSFB0305

FET, MOSFET Arrays Overview

The GSFB0305 is a dual P-channel MOSFET with a drain-source voltage of -30V and continuous drain current of -4.2A at 25°C ambient temperature. It features a typical on-resistance of 65mΩ at VGS=-10V. The device operates within a junction temperature range of -55°C to +150°C and utilizes a PPAK 2x2 Dual 2EP package.

FET, MOSFET Arrays Feature Summary

  • Dual P-Channel configuration for high efficiency switch mode power supplies
  • Advanced MOSFET process technology achieving low on-resistance and low gate charge
  • Fast switching capability combined with reverse body recovery characteristics

FET, MOSFET Arrays Applications

  • High efficiency switched mode power supplies
  • Power management circuits
  • Load switches

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision, as Good-Ark documents may undergo updates. Confirm the package marking code matches the PPAK 2x2 Dual 2EP outline dimensions provided in the official documentation. Ensure the component meets the required thermal resistance specifications for your application design.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual P-channel solution is required for low-voltage applications. The 65mΩ on-resistance supports efficient power handling. Consider the -30V breakdown voltage limit and the -4.2A continuous current rating against your circuit's peak and steady-state requirements.

FET, MOSFET Arrays Part Context

This component belongs to the category of dual discrete MOSFETs designed for space-constrained PCB layouts. It integrates two independent P-channel devices into a single footprint, reducing board area compared to using separate single packages while maintaining electrical isolation between channels.

FET, MOSFET Arrays Replacement Considerations

Cross-reference pinout compatibility and ensure the replacement part supports the PPAK 2x2 Dual 2EP package type. Verify that the substitute device offers equal or lower RDS(ON) and compatible BVDSS ratings for direct integration without schematic changes.

FET, MOSFET Arrays FAQ

What is the maximum pulsed drain current for the GSFB0305?

The maximum pulsed drain current (IDM) is specified as -16.8 A.

Does the GSFB0305 include an integrated body diode?

Yes, the datasheet lists Drain-Source Diode Characteristics, including Forward Voltage (VSD), confirming the presence of an intrinsic body diode.

What is the operating junction temperature range?

The operating junction temperature range is from -55°C to +150°C.

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