GSFK0300

FET, MOSFET Arrays Overview

The GSFK0300 is a dual N-channel MOSFET manufactured by Good-Ark Semiconductor, housed in an SOT-363 surface-mount package. It features a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 800mA at 25°C case temperature. The device exhibits a maximum on-resistance (RDS(on)) of 450mΩ at VGS=4.5V and ID=0.3A, or 650mΩ at VGS=2.5V and ID=0.2A. Gate threshold voltage ranges from 0.5V to 1.2V. Total gate charge is typically 2.6nC with a maximum of 5.2nC at VGS=4.5V. Operating junction temperature spans -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration within a compact SOT-363 package for space-constrained designs
• Advanced MOSFET process technology enabling high cell density and low on-resistance
• Optimized for high efficiency switch mode power supplies with fast switching capabilities
• Features reverse body recovery characteristics suitable for synchronous rectification

FET, MOSFET Arrays Applications

• High efficiency switch mode power supplies
• DC-DC converter circuits
• Low voltage load switching applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct carrier quantity and RoHS compliance status. Confirm that the SOT-363 package marking code matches the required identification standards for your assembly process. Ensure thermal management strategies account for the specified junction-to-ambient thermal resistance when designing for ambient temperatures above 25°C.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring dual N-channel isolation in a minimal footprint. The low gate charge supports high-frequency operation, while the 30V rating provides adequate headroom for low-voltage systems. Consider the RDS(on) increase at lower gate drive voltages if using 2.5V logic levels. Verify that the pulsed drain current capability meets transient load requirements without exceeding thermal limits.

FET, MOSFET Arrays Part Context

This device belongs to Good-Ark Semiconductor's discrete semiconductor product line, specifically categorized under single and dual FETs. It utilizes silicon metal-oxide semiconductor technology designed for general-purpose switching. The SOT-363 package allows for automated surface-mount assembly, integrating two independent channels into a single component to reduce board space compared to individual packages.

FET, MOSFET Arrays Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameters such as VDS, ID, and RDS(on) before considering alternative manufacturers' dual MOSFETs in the SOT-363 package.

FET, MOSFET Arrays FAQ

What is the maximum gate-source voltage allowed for the GSFK0300?

The absolute maximum gate-source voltage (VGS) is ±12V.

Does the GSFK0300 include internal body diodes?

Yes, the datasheet specifies Drain-Source Diode Characteristics, including forward voltage (VSD) and source current ratings, indicating the presence of intrinsic body diodes.

How does the on-resistance vary with gate voltage?

The maximum RDS(on) is 450mΩ at VGS=4.5V and 650mΩ at VGS=2.5V, indicating higher resistance at lower gate drive voltages.