GSFN0207

$0.71

Description：MOSFET 2P-CH 20V 7.5A 8PPAK
Series：-

SKU:e8d4f69acd9f Category: FET, MOSFET Arrays Brand: Good-Ark Semiconductor

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Product introduction

GSFN0207 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Good-Ark Semiconductor. Its product description is MOSFET 2P-CH 20V 7.5A 8PPAK. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for GSFN0207

Description：MOSFET 2P-CH 20V 7.5A 8PPAK
Series：-
Mfr：Good-Ark Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：7.5A (Tc)
Rds On (Max) @ Id, Vgs：33mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：2100pF @ 15V
Power - Max：25W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：8-PPAK (3.15x3.1)
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for GSFN0207

GSFN0207

FET, MOSFET Arrays Overview

The GSFN0207 is a dual P-channel MOSFET from Good-Ark Semiconductor, rated for a drain-source voltage of -20V and continuous drain current of -7.5A at 25°C. It features a maximum on-resistance of 33mΩ at VGS=-4.5V and utilizes the PPAK3x3 surface-mount package. The device supports an operating junction temperature range of -55°C to +150°C with a power dissipation capacity of 0.2W at 25°C.

FET, MOSFET Arrays Feature Summary

Dual P-Channel Configuration
Advanced MOSFET Process Technology
Fast Switching and Reverse Body Recovery

FET, MOSFET Arrays Applications

High efficiency switched mode power supplies
DC/DC converters
Power management circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix DC2209V corresponds to the Tape & Reel carrier quantity of 3,000 pieces per reel. Confirm that the PPAK3x3 package marking matches the required identification for assembly processes. Ensure thermal design accounts for the specified junction-to-case resistance values during operation.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring compact dual P-channel switching in low-voltage environments. The PPAK3x3 package offers space-saving benefits compared to larger footprints. Evaluate thermal derating curves for high ambient temperature conditions to ensure reliable performance within the specified junction temperature limits.

FET, MOSFET Arrays Part Context

This part belongs to the series of silicon-based N-Channel and P-Channel MOSFETs manufactured by Good-Ark Semiconductor. These devices are designed using advanced process technologies to achieve high cell density and low on-resistance, targeting efficiency improvements in modern power electronics.