GSFP6886

$1.11

Description：MOSFET 2N-CH 65V 45A 8PPAK
Series：-

SKU:011618349e28 Category: FET, MOSFET Arrays Brand: Good-Ark Semiconductor

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

GSFP6886 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Good-Ark Semiconductor. Its product description is MOSFET 2N-CH 65V 45A 8PPAK. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for GSFP6886

Description：MOSFET 2N-CH 65V 45A 8PPAK
Series：-
Mfr：Good-Ark Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：65V
Current - Continuous Drain (Id) @ 25°C：45A (Tc)
Rds On (Max) @ Id, Vgs：13mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1890pF @ 30V
Power - Max：67W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Supplier Device Package：8-PPAK (5.1x5.71)
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for GSFP6886

GSFP6886

FET, MOSFET Arrays Overview

The GSFP6886 is a dual N-channel MOSFET manufactured by Good-Ark Semiconductor. It features a 65V drain-source voltage (BVDSS) and a continuous drain current of 45A at 25°C case temperature. The device exhibits a maximum on-resistance of 13mΩ at VGS=10V and ID=20A. Power dissipation reaches 67W at 25°C, with a thermal resistance junction-to-case of 1.86°C/W. Gate charge is typically 17.6nC, with a maximum threshold voltage of 2.5V.

FET, MOSFET Arrays Feature Summary

Advanced MOSFET process technology for high cell density
Low on-resistance combined with low gate charge
Fast switching capability and reverse body recovery

FET, MOSFET Arrays Applications

High efficiency switched mode power supplies
General purpose power switching applications

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer part number against official datasheets to confirm specifications. Ensure the package type matches the required footprint. Check RoHS compliance status if environmental regulations apply. Confirm lead times and packaging quantities directly with authorized distributors or the manufacturer.

FET, MOSFET Arrays Selection Notes

Select this component based on the 65V voltage rating and 45A current capacity requirements. Evaluate thermal management needs given the 67W power dissipation limit. Consider the PPAK5x6 package dimensions for PCB layout compatibility. Verify that the gate drive voltage supports the specified RDS(on) performance.

FET, MOSFET Arrays Part Context

This component belongs to the discrete semiconductor category, specifically within the FET and MOSFET arrays segment. It is designed as a surface-mount device utilizing metal-oxide-semiconductor technology. The dual configuration allows for efficient implementation in bridge circuits or synchronous rectification topologies.

FET, MOSFET Arrays Replacement Considerations

Consult official substitution lists from Good-Ark Semiconductor for verified alternatives. Cross-reference electrical parameters such as BVDSS, ID, and RDS(on) when evaluating potential replacements.