GSFQ4701

FET, MOSFET Arrays Overview

The GSFQ4701 is a 40V N-Channel and P-Channel complementary MOSFET in an SOP-8 package. The N-channel device offers a maximum RDS(on) of 32mΩ at VGS=10V with a continuous drain current (ID) of 6.7A. The P-channel counterpart provides a maximum RDS(on) of 40mΩ at VGS=-10V with an ID of -7.2A. Both channels feature low gate charge for fast switching, high cell density, and reverse body recovery capabilities.

FET, MOSFET Arrays Feature Summary

• Complementary N-Channel and P-Channel configuration in a single SOP-8 package
• Advanced MOSFET process technology achieving high cell density and low on-resistance
• Fast switching performance combined with reverse body diode recovery characteristics
• Low gate charge design optimized for high efficiency switched mode power supplies

FET, MOSFET Arrays Applications

• High efficiency switched mode power supplies
• DC/DC converter circuits
• Power management modules requiring compact complementary pairs

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel quantity. Ensure compliance requirements match the project specifications, noting that the datasheet indicates RoHS compliant status. Confirm thermal management strategies align with the specified junction-to-case and junction-to-ambient thermal resistance values provided in the absolute maximum ratings section.

FET, MOSFET Arrays Selection Notes

Select this component when a compact complementary pair is required for low-voltage power applications. The N-channel device supports up to 6.7A continuous current, while the P-channel handles -7.2A. Consider the SOP-8 footprint constraints and ensure the operating voltage remains within the 40V limit. Evaluate thermal performance based on the specified power dissipation and derating curves for the intended ambient conditions.

FET, MOSFET Arrays Part Context

This device belongs to the category of complementary MOSFETs designed for power switching applications. It integrates both N-type and P-type enhancement-mode field-effect transistors into a single surface-mount package. The design focuses on minimizing conduction losses through low on-resistance while maintaining rapid switching speeds suitable for modern high-frequency power conversion topologies.

FET, MOSFET Arrays Replacement Considerations

Consult official substitution lists from Good-Ark Semiconductor or equivalent manufacturers for verified alternatives. Ensure any replacement maintains the 40V breakdown voltage, compatible pinout, and similar thermal characteristics. Verify that the alternative device meets the same electrical performance criteria for on-resistance and gate charge.

FET, MOSFET Arrays FAQ

What is the maximum continuous drain current for the N-channel device?

The maximum continuous drain current for the N-channel device is 6.7A at a case temperature of 25°C.

Does the GSFQ4701 support reverse body diode recovery?

Yes, the datasheet specifies that the device features fast switching and reverse body recovery characteristics.

What is the maximum gate-source voltage rating?

The absolute maximum rating for the gate-source voltage (VGS) is ±20V for both the N-channel and P-channel devices.